JPS6129121A - Gaas liquid phase epitaxial growth method - Google Patents

Gaas liquid phase epitaxial growth method

Info

Publication number
JPS6129121A
JPS6129121A JP14986784A JP14986784A JPS6129121A JP S6129121 A JPS6129121 A JP S6129121A JP 14986784 A JP14986784 A JP 14986784A JP 14986784 A JP14986784 A JP 14986784A JP S6129121 A JPS6129121 A JP S6129121A
Authority
JP
Japan
Prior art keywords
gaas
substrate
epitaxial growth
liquid phase
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14986784A
Other languages
Japanese (ja)
Inventor
Shiyouji Kuma
隈　障二
Kazuhiro Kurata
倉田　一宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP14986784A priority Critical patent/JPS6129121A/en
Publication of JPS6129121A publication Critical patent/JPS6129121A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To form a semi-insulating GaAs epitaxial layer which does not cause a defect by rich Ga by contacting Bi solution in which one of GaAs and Ga and As are dissolved with a GaAs substrate. CONSTITUTION:A small piece of GaAs and As 4 are dissolved in Bi solution 2. The solution 2 is contacted with a GaAs substrate 1 held at a substrate holder 5. When the temperature is then decreased, the GaAs layer is grown on the substrate 1. When the solution 2 is removed after the setting time, no defect occurs due to rich Ga, and semi-insulating GaAs epitaxially grown layer can be obtained.

Description

【発明の詳細な説明】 ［産業上の利用分野］　　′ 本発明は、Ｑ　＆　Ａ　８基板上へのＧａ　Ａｓ層の液
相エピタキシャル成長法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for liquid phase epitaxial growth of a GaAs layer on a Q & A 8 substrate.

［従来の技術］ Ｉ−Ｖ族化合物は、低融点の■族元素と蒸気圧の高いＶ
族元素の化合物であるため、Ｖ族元素が化合物表面から
抜けやすいものである。[Prior art] I-V compounds are composed of a group I element with a low melting point and V with a high vapor pressure.
Since it is a compound of group elements, the group V elements easily escape from the surface of the compound.

従来、（３ａ　Ａｓ基板上へのＱａ　ＡＳの液相エピタ
キシャル成長は、一般にＧａ　ＡＳを溶解したＧａ融液
をＱａ　Ａｓ基板に接触させてＧａＡｓエピタキシャル
成長層を得ていた。Conventionally, in the liquid phase epitaxial growth of Qa AS on a 3a As substrate, a Ga melt in which Ga AS is dissolved is brought into contact with the Qa As substrate to obtain a GaAs epitaxial growth layer.

［発明が解決しようとする問題点Ｊ 上記した従来の方法では、Ｇａ融液を用いているた゛め
、どうしてもＱａリッチになり、点欠陥等の存在するＧ
ａ　Ａｓエピタキシャル成長層になる傾向があった。[Problem to be solved by the invention J In the above-mentioned conventional method, since Ga melt is used, it inevitably becomes Qa-rich and G containing point defects etc.
a There was a tendency to become an As epitaxial growth layer.

［問題点を解決するための手段Ｊ 本発明は、上記した従来技術の問題点に鑑み、Ｑａ　Ａ
ｓ基板上にほぼストイキオメトリに合ったＱａ　ＡＳ層
を成長させることができる液相エピタキシャル成長法を
提供することを目的どし、その目的を達成するために少
なくともＧａ　ＡｓまたはＧａの一方およびＡｓを溶解
させた３ｉ融液をＧａ　Ａｓ層を成長させることを特徴
とするものである。[Means for Solving the Problems J] In view of the problems of the prior art described above, the present invention is based on Qa A
The purpose of the present invention is to provide a liquid phase epitaxial growth method capable of growing a Qa AS layer with approximately stoichiometry on a S substrate, and to achieve that purpose, at least one of GaAs or Ga and As is used. This method is characterized by growing a GaAs layer using the dissolved 3i melt.

［作用〕 本発明による作用を以下に説明する。[Effect] The effects of the present invention will be explained below.

Ｂｉ融液に少なくともＧａまたはＱａ　ＡＳの一方、お
よびＡｓを溶解させＱａ　Ａｓ基板と接触させる。Ｂｉ
は融液が約２７１℃と低融点でかつＡＳに対して全率固
溶であるため、温度を少しずつ下げていくと、ＧａＡｓ
がＱａ　ＡＳ基板上に成長し始める。At least one of Ga or Qa AS and As are dissolved in the Bi melt and brought into contact with the Qa As substrate. Bi
Since the melt has a low melting point of about 271°C and is completely solid soluble in AS, if the temperature is gradually lowered, GaAs
begins to grow on the Qa AS substrate.

成長終了後、３ｉ融液を除去すればＧａＡｓ基板上には
Ｇａリッチになることなくストイキオメトリにほぼ合っ
たＧａ　Ａｓ層が形成されることになる。After the growth is completed, if the 3i melt is removed, a GaAs layer that is not Ga-rich and has approximately the same stoichiometry will be formed on the GaAs substrate.

［実施例コ 第１図に本発明の一実施例を示す。[Example code] FIG. 1 shows an embodiment of the present invention.

３ｉ融液２にＧａ　Ａｓ　３の小片およびＡＳ４が溶解
させられる。Small pieces of GaAs 3 and AS4 are dissolved in the 3i melt 2.

その３ｉ融液２を基板ホルダー５に保持させたＧａＡｓ
基板１と接触させる。GaAs with the 3i melt 2 held in the substrate holder 5
It is brought into contact with the substrate 1.

その後温度を少しずつ下げていくとＧａＡｓ層がＧａ　
ＡＳ基板１上に成長する。After that, when the temperature is gradually lowered, the GaAs layer becomes Ga
Grows on AS substrate 1.

設定時間後３ｉ融液２を除去するとＧａリッチによる欠
陥が生ずることなくしかも半絶縁性を有するきわめて良
好なＧａＡｓエピタキシャル成長層を得ることができた
。When the 3i melt 2 was removed after the set time, it was possible to obtain an extremely good GaAs epitaxial growth layer with no defects due to Ga richness and with semi-insulating properties.

また、Ｇａ　ＡＳ　３の代わりにＱａを用いてもよく、
その場合Ｂｉ融液に加えるＡＳ４の量を多くし、できる
だけＡＳリッチになるようにする。Also, Qa may be used instead of Ga AS 3,
In that case, increase the amount of AS4 added to the Bi melt to make it as rich as possible in AS.

また、ＡＳ４の代わりにＩｎ　Ａｓを用いても同様の効
果が得られるものである。Further, the same effect can be obtained even if InAs is used instead of AS4.

［発明の効果］ 以上に説明した通り、本発明によれば、少なくともＧａ
　ＡｓまたはＧａの一方およびＡＳを溶解させた１３ｉ
融液をＧａ　Ａｓ基板に接触させることにより、半絶縁
性でＧａリッチによる欠陥を生ずることなくほぼストイ
キオメトリに合ったＧａ　ＡＳエピタキシャル成長層を
得ることができるという顕著な効果を奏するものである
。[Effect of the invention] As explained above, according to the present invention, at least Ga
13i in which either As or Ga and AS are dissolved
By bringing the melt into contact with the GaAs substrate, it is possible to obtain a Ga AS epitaxially grown layer that is semi-insulating and nearly conforms to stoichiometry without causing defects due to Ga richness.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例を示す説明図である。 １；ＧａＡｓ基板、２；Ｂｉ融液、３：ＧａＡｓ。 ４：Ａｓ、５；基板ホルダー。 FIG. 1 is an explanatory diagram showing one embodiment of the present invention. 1: GaAs substrate, 2: Bi melt, 3: GaAs. 4: As, 5: Substrate holder.

Claims (1)

【特許請求の範囲】[Claims] （１）少なくともＧａＡｓまたはＧａの一方およびＡｓ
を溶解させたＢｉ融液をＧａＡｓ基板に接触させてＧａ
Ａｓ層を成長させることを特徴とするＧａＡｓ液相エピ
タキシャル成長法。(1) At least one of GaAs or Ga and As
A Bi melt containing dissolved GaAs is brought into contact with a GaAs substrate.
A GaAs liquid phase epitaxial growth method characterized by growing an As layer.
JP14986784A 1984-07-18 1984-07-18 Gaas liquid phase epitaxial growth method Pending JPS6129121A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14986784A JPS6129121A (en) 1984-07-18 1984-07-18 Gaas liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14986784A JPS6129121A (en) 1984-07-18 1984-07-18 Gaas liquid phase epitaxial growth method

Publications (1)

Publication Number Publication Date
JPS6129121A true JPS6129121A (en) 1986-02-10

Family

ID=15484385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14986784A Pending JPS6129121A (en) 1984-07-18 1984-07-18 Gaas liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS6129121A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110620A (en) * 1988-10-20 1990-04-23 Canon Inc Coordinate input device
JPH02110618A (en) * 1988-10-20 1990-04-23 Canon Inc Coordinate input device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110620A (en) * 1988-10-20 1990-04-23 Canon Inc Coordinate input device
JPH02110618A (en) * 1988-10-20 1990-04-23 Canon Inc Coordinate input device

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