JPS5917241A - Liquid phase growth method - Google Patents
Liquid phase growth methodInfo
- Publication number
- JPS5917241A JPS5917241A JP12693682A JP12693682A JPS5917241A JP S5917241 A JPS5917241 A JP S5917241A JP 12693682 A JP12693682 A JP 12693682A JP 12693682 A JP12693682 A JP 12693682A JP S5917241 A JPS5917241 A JP S5917241A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substrate
- boat
- liquid phase
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は液相成長方法に関する。[Detailed description of the invention] The present invention relates to a liquid phase growth method.
近年、液相エピタキシャル法により発光ダイオードや半
導体レーザー等の作製が広く行なわれるようになった。In recent years, light emitting diodes, semiconductor lasers, and the like have become widely manufactured using liquid phase epitaxial methods.
第１図は従来の液相成長を行なうためのスライドボード
の断面図を示す。同図において１はボート本体、２はス
ライドボート、３は基板、４は溶液、６は石英棒である
。同図において基板３と溶液４を装着し、一定時間、成
長温度に保った後徐々に冷却し、溶液４を基板上にスラ
イドさせて結晶成長を行なう。従来のこの液相成長方法
では、基板３上に得られた成長層の膜厚は基板３表面の
中央部で均一になるが、端部においては中央部より厚く
なる。このため、成長結晶を使用して素子等を作製する
場合、フォトマスク工程での密着が一様とならず、基板
が割れたり均一なフォトエツチングができない。そのた
め素Ｐ特性にばらつきが生じる欠点があった。FIG. 1 shows a cross-sectional view of a slide board for performing conventional liquid phase growth. In the figure, 1 is a boat body, 2 is a slide boat, 3 is a substrate, 4 is a solution, and 6 is a quartz rod. In the figure, a substrate 3 and a solution 4 are mounted, kept at a growth temperature for a certain period of time, and then gradually cooled, and the solution 4 is slid onto the substrate to perform crystal growth. In this conventional liquid phase growth method, the thickness of the grown layer obtained on the substrate 3 is uniform at the center of the surface of the substrate 3, but is thicker at the edges than at the center. For this reason, when a device or the like is manufactured using a grown crystal, the adhesion during the photomask process is not uniform, resulting in cracking of the substrate and failure to achieve uniform photoetching. Therefore, there was a drawback that variations occurred in the elementary P characteristics.
このような現象の生じる原因は結晶成長時の冷却の際、
装着されている溶液がボートの壁と接している部分から
冷却され、局部的に成長結晶元素の過飽和度が高くなる
ためである。この成長層厚を均一化する方法は従来にお
いても考えられている。第２図にはその従来の方法の一
例を示す。ボートの構造は溶液４が基板３上にスライド
した時、基板３の端部の表面」二にある溶液４の高さ−
を中央部の高さｈ２より低くなるようにし、端部で溶液
の過飽和度による中央部との濃度勾配を小さくし、結晶
成長が端部で促進するのを防止している。The reason for this phenomenon is that during cooling during crystal growth,
This is because the installed solution is cooled from the part where it is in contact with the wall of the boat, and the degree of supersaturation of the growing crystal elements locally becomes high. Methods for making the thickness of the grown layer uniform have been considered in the past. FIG. 2 shows an example of the conventional method. The structure of the boat is such that when the solution 4 slides onto the substrate 3, the height of the solution 4 at the edge surface of the substrate 3 is -
is set to be lower than the height h2 of the central portion, thereby reducing the concentration gradient between the central portion and the central portion due to the degree of supersaturation of the solution at the ends, thereby preventing crystal growth from being promoted at the ends.
すなわち、スライドボートの溶液だめの内面付近で溶液
の高さを低くすることにより前記問題は解決される。That is, the above problem is solved by lowering the height of the solution near the inner surface of the solution reservoir of the slide boat.
しかし、第２図のようにスライドボートに細工する構造
では、溶液中で完全にとけきらないソース結晶等が細し
部にひっかかり、溶液のスライドが困難となったり、ス
ライドボートの掃除が困難で、特に端部等に溶液が付着
して残ることがある。However, with the structure of the slide boat as shown in Figure 2, source crystals that are not completely dissolved in the solution get caught in the narrow parts, making it difficult to slide the solution and making it difficult to clean the slide boat. , the solution may adhere and remain, especially at the edges.
又、溶液だめに入れる溶液量の違いによって中央部と端
部において溶液の高さの差が一定しない。Furthermore, due to the difference in the amount of solution put into the solution reservoir, the difference in height of the solution between the center and the ends is not constant.
この鯖宋、同一スライドボートで溶液量を少なくして成
長を行なう場合、溶液の高さに中央部と端部で差が和分
に付かず、成長層は端部で厚くなる。In this case, when growth is performed with a smaller amount of solution in the same slide boat, the difference in the height of the solution between the center and the edges is not balanced out, and the growth layer becomes thicker at the edges.
本発明の液相成長方法は上記のように溶液量が変化して
も常に一定の高さの差を溶液にもたせて成長を行なう方
法を提供するものである。The liquid phase growth method of the present invention provides a method for performing growth while always maintaining a constant height difference in the solution even when the amount of the solution changes as described above.
以ド、図面をもとにして本発明の液相成長方法の実施例
を説明する。第３図に示すスライドボートの形状−一第
１図に示す従来のボートと同一の形状とし、第１図と共
通部分には同一番号を付している。ここでは溶液４に端
部と中央部で高さの差を設ける方法として溶液の上に置
くふた５の形状に工夫をこらしている。すなわち２ふた
５の溶液に接する面は端部より中央部をくほませろ形状
になっている。ふた５を溶液４の上に１′６″けは、溶
液４はふたの底面（溶液と接する而）の形状に従って整
形される。第３図は溶液４上にふた５を置いた状、態を
示している。Hereinafter, embodiments of the liquid phase growth method of the present invention will be described based on the drawings. Shape of the slide boat shown in FIG. 3 - The shape is the same as the conventional boat shown in FIG. 1, and parts common to those in FIG. 1 are given the same numbers. Here, in order to create a height difference between the ends and the center of the solution 4, the shape of the lid 5 placed over the solution is devised. That is, the surfaces of the two lids 5 that come into contact with the solution are shaped so that the center part is more rounded than the ends. When the lid 5 is placed 1'6" above the solution 4, the solution 4 is shaped according to the shape of the bottom surface of the lid (the part that contacts the solution). Figure 3 shows the state in which the lid 5 is placed on the solution 4. It shows.
第３図に示すふたの底面の形状においては溶液４の川が
ふた５のくはんだ部分の体積より多い限り、溶液４の高
さに常に端部と中央部で一定の差を付けることが＋１１
能となる。In the shape of the bottom of the lid shown in Fig. 3, as long as the volume of the solution 4 is larger than the volume of the soldered part of the lid 5, it is necessary to always maintain a certain difference in the height of the solution 4 between the edges and the center.
Becomes Noh.
々に変化させるような形状もとれる。It can also take on shapes that change from time to time.
ふたにする材料としては、通常ボート桐料として用いら
れるカーボンや石英、そしてこれらと同様な特性を有す
るものが適当である。又、溶液中′＼とかず成長用元素
のソースとなる結晶を用いてふたの底面と同様の整形を
行ない、ふたとして使用することも可能である。上記結
晶が溶液をおさえるのに十分な性情をもっていない場合
は、結晶の−ににカーボンや石矢のブロックを置くこと
もできる。Suitable materials for the lid include carbon and quartz, which are commonly used as boat material, and materials having similar properties. Furthermore, it is also possible to use a crystal as a source of elements for crystal growth in solution to perform the same shaping as the bottom of the lid and use it as a lid. If the above-mentioned crystal does not have sufficient properties to suppress the solution, a block of carbon or stone arrow can be placed between the crystals.
以下にＧ ａ Ａ ｓの結晶成長を例にとり第３図をも
とに本発明の液相成長方法をさらに具体的に述べる。The liquid phase growth method of the present invention will be described in more detail below with reference to FIG. 3, taking crystal growth of GaAs as an example.
カーボンボート本体１にＧａ Ａ ｓ基板３を装着し、
溶液／こめにＧａを入れ、小さく割ったＧ ａ Ａ ｓ
多結晶を加え、第３図に示す形状のカーボンのふた５を
その」二におく。ここでふたの端ｉ！’ｌ＜と中央部の
高さの差を２陥とした。中央部での溶液の高さは４ｍｍ
となるように溶液の量を決定した。成長温度を８５０℃
、冷却速度０．５上乃）として成長を１０分間行なった
。基板３の中央部での成長層の膜厚ばｓ ｉｔｍであり
、基板３の端部においての膜厚は８〜１０１上ｍであっ
た。Attach the GaAs substrate 3 to the carbon boat body 1,
Solution/Put Ga into rice and break it into small pieces Ga A s
Add the polycrystal and place a carbon lid 5 having the shape shown in FIG. Here is the edge of the lid! The difference between the height of 'l< and the center part was defined as 2 defects. The height of the solution at the center is 4 mm
The amount of solution was determined so that Growth temperature 850℃
Growth was carried out for 10 minutes at a cooling rate of 0.5 or higher. The thickness of the grown layer at the center of the substrate 3 was sitm, and the thickness at the edges of the substrate 3 was 8 to 101 m.
比較のため第１図で示した構造のボートにより同一の溶
液量と成長条件で成長を試みた。基板中央部下の成長層
の膜厚は前記の成長膜厚とほぼ同等で５１上ｍであった
が、端部においては１５〜２０１上ｍとなった。For comparison, growth was attempted using a boat with the structure shown in Figure 1 using the same solution volume and growth conditions. The film thickness of the grown layer under the center of the substrate was approximately the same as the above-mentioned grown film thickness, which was 51 m, but at the edges it was 15 to 201 m.
この両結果は再現性よく得られ、本発明の優位性を顕著
に示している。上記のＧ ａ Ａ ｓ以外の１Ｉｌ−Ｖ
族、■−Ｍ族等の結晶の液相成長においても本発明の方
法を用いれは同様の効果を示すことがわかった。Both results were obtained with good reproducibility and clearly demonstrate the superiority of the present invention. 1Il-V other than the above Ga As
It has been found that the method of the present invention exhibits similar effects in the liquid phase growth of crystals of the group 3, group 1-M, etc.
以上説明した本発明の液相成長方法は、溶液の屑にかか
わらず、溶液の端部と中央部での高さの差が一定となり
常に安定して均一な膜厚の結晶を成長させることができ
る。さらに、ストライドボードの溶液だめ部の側面に凹
部等を設けないので従来のように掃除に手間がかかるこ
ともない。The liquid phase growth method of the present invention described above has a constant height difference between the edges and the center of the solution, regardless of the presence of debris in the solution, making it possible to grow crystals with a stable and uniform thickness at all times. can. Furthermore, since no recesses or the like are provided on the side surface of the solution reservoir of the stride board, cleaning does not take much time as in the conventional method.
第１図は従来の液相成長方法を説明するためのボートの
断面図、第２図は溶液だめの形状を変化させた他の従来
の液相成長方法を説明するためのボートの断面図、第３
図は溶液−ににふたを装置した本発明の実施例における
液相成長方法を説明するためのボートの断面図、第４図
、第５図はそれぞれ本発明の方法に用いるふたの実施例
を示す図である。
１・・・・・ボート本体、２・・−・スライドボート、
３・・・・基板、４・・・・溶液、５・・・・・・ふた
、６・・・・・石英棒。FIG. 1 is a sectional view of a boat for explaining a conventional liquid phase growth method, and FIG. 2 is a sectional view of a boat for explaining another conventional liquid phase growth method in which the shape of the solution reservoir is changed. Third
The figure is a cross-sectional view of a boat for explaining the liquid phase growth method in an embodiment of the present invention in which a lid is installed on the solution. FIG. 1...Boat body, 2...Slide boat,
3...Substrate, 4...Solution, 5...Lid, 6...Quartz rod.
Claims (1)
対向するように配置し、前記端面と前記基板との間に溶
液を介在させることにより、前記溶液のｊｇさを前記基
板上で変化させる液相成長方法。・By arranging an object having an uneven end surface so that the end surface faces the substrate and interposing a solution between the end surface and the substrate, the jg of the solution is changed on the substrate. liquid phase growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12693682A JPS5917241A (en) | 1982-07-20 | 1982-07-20 | Liquid phase growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12693682A JPS5917241A (en) | 1982-07-20 | 1982-07-20 | Liquid phase growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5917241A true JPS5917241A (en) | 1984-01-28 |
Family
ID=14947563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12693682A Pending JPS5917241A (en) | 1982-07-20 | 1982-07-20 | Liquid phase growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5917241A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0626305A (en) * | 1992-07-10 | 1994-02-01 | Hitachi Ltd | Turbine control device |
-
1982
- 1982-07-20 JP JP12693682A patent/JPS5917241A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0626305A (en) * | 1992-07-10 | 1994-02-01 | Hitachi Ltd | Turbine control device |
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