JPS5375176A - Liquid phase epotaxial growth method of compound semiconductor - Google Patents

Liquid phase epotaxial growth method of compound semiconductor

Info

Publication number
JPS5375176A
JPS5375176A JP15108776A JP15108776A JPS5375176A JP S5375176 A JPS5375176 A JP S5375176A JP 15108776 A JP15108776 A JP 15108776A JP 15108776 A JP15108776 A JP 15108776A JP S5375176 A JPS5375176 A JP S5375176A
Authority
JP
Japan
Prior art keywords
epotaxial
liquid phase
compound semiconductor
growth method
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15108776A
Other languages
Japanese (ja)
Inventor
Osamu Ishihara
Mutsuyuki Otsubo
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15108776A priority Critical patent/JPS5375176A/en
Publication of JPS5375176A publication Critical patent/JPS5375176A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow up epitaxial crystal layer having good surface condition with good reproducibility, by contacting substrate plate for seed crystal with melting liquid during the course of temp. rinsing to make both familiar.
COPYRIGHT: (C)1978,JPO&Japio
JP15108776A 1976-12-15 1976-12-15 Liquid phase epotaxial growth method of compound semiconductor Pending JPS5375176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15108776A JPS5375176A (en) 1976-12-15 1976-12-15 Liquid phase epotaxial growth method of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15108776A JPS5375176A (en) 1976-12-15 1976-12-15 Liquid phase epotaxial growth method of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5375176A true JPS5375176A (en) 1978-07-04

Family

ID=15511030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15108776A Pending JPS5375176A (en) 1976-12-15 1976-12-15 Liquid phase epotaxial growth method of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5375176A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021222A (en) * 1973-06-27 1975-03-06
JPS5184578A (en) * 1975-01-21 1976-07-23 Sharp Kk HANDOTAIKETSUSHONOSEIZOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021222A (en) * 1973-06-27 1975-03-06
JPS5184578A (en) * 1975-01-21 1976-07-23 Sharp Kk HANDOTAIKETSUSHONOSEIZOHO

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