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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP7255176ApriorityCriticalpatent/JPS52155188A/en
Publication of JPS52155188ApublicationCriticalpatent/JPS52155188A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To grow compound semiconductor crystal layer of of arbitrarily prescribed composition in liquid phase by blowing a gas containing component element of the compound semiconductor over a melt for growing crystal.
COPYRIGHT: (C)1977,JPO&Japio
JP7255176A1976-06-181976-06-18Liquid phase growth of semiconductor crystal
PendingJPS52155188A
(en)