JPS5364465A - Semiconductor crystal production apparatus - Google Patents

Semiconductor crystal production apparatus

Info

Publication number
JPS5364465A
JPS5364465A JP14005076A JP14005076A JPS5364465A JP S5364465 A JPS5364465 A JP S5364465A JP 14005076 A JP14005076 A JP 14005076A JP 14005076 A JP14005076 A JP 14005076A JP S5364465 A JPS5364465 A JP S5364465A
Authority
JP
Japan
Prior art keywords
production apparatus
semiconductor crystal
crystal production
melt
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14005076A
Other languages
Japanese (ja)
Inventor
Makoto Ishii
Toshio Tanaka
Ryoichi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14005076A priority Critical patent/JPS5364465A/en
Publication of JPS5364465A publication Critical patent/JPS5364465A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To reduce mixing of different melts at the time of growing epitaxial crystals and make possible arbitrary controlling of the supply rate of the melt for adjusting the concentration of the grown layer to a specified value.
COPYRIGHT: (C)1978,JPO&Japio
JP14005076A 1976-11-19 1976-11-19 Semiconductor crystal production apparatus Pending JPS5364465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14005076A JPS5364465A (en) 1976-11-19 1976-11-19 Semiconductor crystal production apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14005076A JPS5364465A (en) 1976-11-19 1976-11-19 Semiconductor crystal production apparatus

Publications (1)

Publication Number Publication Date
JPS5364465A true JPS5364465A (en) 1978-06-08

Family

ID=15259809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14005076A Pending JPS5364465A (en) 1976-11-19 1976-11-19 Semiconductor crystal production apparatus

Country Status (1)

Country Link
JP (1) JPS5364465A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169119A (en) * 1984-09-12 1986-04-09 Nec Corp Boat for liquid-phase epitaxial growth
JPH03112931U (en) * 1990-03-06 1991-11-19

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169119A (en) * 1984-09-12 1986-04-09 Nec Corp Boat for liquid-phase epitaxial growth
JPH0534820B2 (en) * 1984-09-12 1993-05-25 Nippon Electric Co
JPH03112931U (en) * 1990-03-06 1991-11-19

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