JPH0534820B2 - - Google Patents
Info
- Publication number
- JPH0534820B2 JPH0534820B2 JP59190905A JP19090584A JPH0534820B2 JP H0534820 B2 JPH0534820 B2 JP H0534820B2 JP 59190905 A JP59190905 A JP 59190905A JP 19090584 A JP19090584 A JP 19090584A JP H0534820 B2 JPH0534820 B2 JP H0534820B2
- Authority
- JP
- Japan
- Prior art keywords
- bathtub
- growth
- slider
- epitaxial growth
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 11
- 239000007791 liquid phase Substances 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、特に半導体レーザダイオード等の化
合物半導体のエピタキシヤル成長に使用するスラ
イド式液晶成長用ボートの改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a slide-type liquid crystal growth boat used particularly for epitaxial growth of compound semiconductors such as semiconductor laser diodes.
従来、半導体レーザダイオードの液晶エピタキ
シヤル成長には、第２図に示すような、スライド
式カーボンボートを用いていた。すなわち、第２
図の液相成長用ボートは、浴槽部１０と、結晶保
持部２０１を有するウエーハスライド板２０（以
下スライダーと称する）と、ガイド３０とからな
り、ガイド３０に嵌め合わされた浴槽１０の下側
をスライドするスライダー２０によつて結晶保持
部２０１に保持されたウエーハが、各溶液の底部
に運ばれて、多層成長が行なわれる。
Conventionally, a sliding carbon boat as shown in FIG. 2 has been used for liquid crystal epitaxial growth of semiconductor laser diodes. That is, the second
The boat for liquid phase growth shown in the figure consists of a bathtub section 10, a wafer slide plate 20 (hereinafter referred to as slider) having a crystal holding section 201, and a guide 30. The wafer held by the crystal holding part 201 by the sliding slider 20 is carried to the bottom of each solution, and multilayer growth is performed.
しかしながら、従来のボートにおいては、スラ
イドによつてカーボンでなる浴槽１０やスライダ
ー２０が摩耗してこれらの間にすき間ができ、こ
の結果、ガイド３０に嵌合された浴槽１０とスラ
イダー２０とのすき間を介して前の溶液が持ち込
まれて、成長層界面及び成長層内の組成比の制御
が困難になる。
However, in conventional boats, the bathtub 10 and the slider 20 made of carbon are worn out by sliding, and a gap is created between them. The previous solution is brought in through the growth layer, making it difficult to control the composition ratio at the growth layer interface and within the growth layer.
この対策として、摩耗の少ない硬質材料を採用
したり加工精度を向上させて、すき間自体を減少
せしめたり、浴槽１０とスライダー２０とがガイ
ド３０の外側面にネジ４０を取り付けてスキ間を
抑える等々の施策が講じられてきた。 As a countermeasure for this, the gap itself can be reduced by using hard materials with less wear and improving processing accuracy, and by attaching screws 40 to the outer surfaces of the guide 30 between the bathtub 10 and the slider 20 to reduce the gap. Measures have been taken.
しかし、使用材料がカーボンである場合、摩耗
を完全に抑える事は不可能であり、スキ間防止の
ためにネジ４０による締めつけを大きくすると逆
に摩耗が大きくなる。また、摩耗によるカーボン
の粉や粒子がウエーハ表面及び成長用溶液に付着
し、スライドの際にウエーハ表面を傷つけ、スキ
間防止対策に伴う、表面汚染の問題が発生する。 However, when the material used is carbon, it is impossible to completely suppress wear, and increasing the tightening of the screws 40 to prevent gaps actually increases wear. Furthermore, carbon powder and particles due to wear adhere to the wafer surface and the growth solution, damaging the wafer surface during sliding, resulting in surface contamination problems associated with gap prevention measures.
本発明の目的は、各エピタキシヤル成長層の組
成比を制御しつつ、ウエーハ表面に傷のない良質
のエピタキシヤル結晶を得る液相成長用ボートを
提供することにある。 An object of the present invention is to provide a boat for liquid phase growth that can obtain high quality epitaxial crystals without scratches on the wafer surface while controlling the composition ratio of each epitaxial growth layer.
本発明によれば、浴槽の内壁底面部の外稜に、
溶液が表面張力によつて流れ込まない間〓、好ま
しくは高さ30〜150〔μ・ｍ〕、巾100〜500〔μ・
ｍ〕の間〓を有し、また、スライダーの結晶保持
部のくりぬき部の外周を、好ましくは、Ｒ＝0.05
〜0.5〔m.m〕で面取りした液相エピタキシヤル成
長用ボートが得られる。
According to the present invention, on the outer ridge of the bottom part of the inner wall of the bathtub,
While the solution does not flow in due to surface tension, the height is preferably 30 to 150 [μ・m] and the width is 100 to 500 [μ・m].
m], and the outer periphery of the hollowed out part of the crystal holding part of the slider is preferably R=0.05.
A boat for liquid phase epitaxial growth with a chamfer of ~0.5 [mm] is obtained.
上記ボートを用いることによつて、スライドの
際の角のカケを減少せしめ、さらに、浴槽の内壁
底面部の外稜に形成した溝が、前記カーボン粒子
および汚れを核とした形成溶質核等をスライドに
よつてウエーハ表面上を移送しないように掃き集
めるため、結晶表面上に傷が発生せず、しかも持
ち込まれが少なくなり、この結果、各層の組成化
の制御性が極めて高い良質の液相エピタキシヤル
成長が得られ生産性が向上する。
By using the above-mentioned boat, chipping of the corners during sliding can be reduced, and the grooves formed on the outer edge of the bottom of the inner wall of the bathtub can trap solute nuclei formed from the carbon particles and dirt. Since the slide sweeps the wafer surface without transporting it, no scratches occur on the crystal surface, and less is carried in. As a result, a high-quality liquid phase with extremely high controllability of the composition of each layer is produced. Epitaxial growth is obtained and productivity is improved.
以下、本発明を図面を参照して述べる。 The present invention will be described below with reference to the drawings.
第１図は本発明の一実施例を示し、特に同図Ａ
およびＢは浴槽１０およびスライダー２０の部分
斜視断面図であり、同図Ｃは浴槽１０およびスラ
イダー２０を重ね合わせた部分断面図である。す
なわち、浴槽１０は、その内壁底面部の外稜に溶
液が表面張力によつて流れ込まない間〓１０１が
設けられている。この間〓１０１は、高さ30〜
150〔μ・ｍ〕、巾100〜500〔μ・ｍ〕が好ましい。
また、スライダー２０の結晶保持部２０１となる
くりぬき部は、好ましくはＲ＝0.05〜0.5〔mm〕
の面取り２０２が施してある。 FIG. 1 shows an embodiment of the present invention, and in particular, FIG.
and B are partial perspective sectional views of the bathtub 10 and the slider 20, and C is a partial sectional view of the bathtub 10 and the slider 20 superimposed on each other. That is, the bathtub 10 is provided with a wall 101 on the outer edge of the bottom of the inner wall to prevent the solution from flowing due to surface tension. During this time, the height of 101 is 30~
150 [μ·m] and width 100 to 500 [μ·m] are preferable.
Furthermore, the hollowed out portion of the slider 20 that becomes the crystal holding portion 201 preferably has an radius of 0.05 to 0.5 [mm].
A chamfer 202 is provided.
かかる構成のスライダー２０の結晶保持部２０
１に基板ウエーハ５０を設置し、第１図Ｃ、第２
図のように浴槽１０を載置して、ガイド３０に嵌
合する。その際に、第１図に示すように、ガイド
３０と、浴槽１０およびスライダー２０とのスキ
間が無く、かつスライダー２０のスライドを妨げ
ない様に、ネジ４０を微調してネジ止めする。 Crystal holding part 20 of slider 20 having such a configuration
The substrate wafer 50 is placed on the
Place the bathtub 10 as shown in the figure and fit it into the guide 30. At this time, as shown in FIG. 1, the screws 40 are finely adjusted and screwed so that there is no gap between the guide 30, the bathtub 10, and the slider 20, and the sliding of the slider 20 is not hindered.
しかる後に浴槽１０に、各成長用ソースをチヤ
ージして、通常のエピタキシヤル成長を行う。本
発明の実施結果によれば、スライドの際の溶液の
持ち込まれ量が極めて少なく、成長回毎のもち込
まれ量の再現性を保証しつつ表面の傷がほとんど
ない良質のエピタキシヤル結晶が得られた。即
ち、各エピタキシヤル成長層の組成比は、Alx
Ga1-xAsの場合のAlの混晶比ｘ（一例として0.38
±0.01）、InGaAsPの格子整合条件△ａ／ａ（−
（５±２）×10-5）、又ｎ−A1GaAsの場合のTeに
よるｎ型キヤリア濃度（一例として、５±0.1×
1019）のＰ−InGaAsPの場合のZnによるＰ型キ
ヤリア濃度（一例として、３±0.1×1018）が、
再現性よく得られ、表面状態も極めて良好であつ
た。 Thereafter, each growth source is charged in the bath 10, and normal epitaxial growth is performed. According to the results of implementing the present invention, the amount of solution brought in during sliding is extremely small, and high-quality epitaxial crystals with almost no scratches on the surface can be obtained while ensuring reproducibility of the amount brought in for each growth cycle. It was done. That is, the composition ratio of each epitaxial growth layer is Al x
G a1-x Al mixed crystal ratio x in the case of As (0.38 as an example
±0.01), InGaAsP lattice matching condition △a/a(-
(5±2)×10 -5 ), and the n-type carrier concentration due to Te in the case of n-A1GaAs (as an example, 5±0.1×
In the case of P-InGaAsP (10 19 ), the P-type carrier concentration due to Zn (for example, 3 ± 0.1 × 10 18 ) is
It was obtained with good reproducibility and the surface condition was also very good.
従つて、ボート交換に伴う種々の成長条件出し
や、そのための準備工数が減少し、ボートの信頼
性が増加し、液相エピタキシヤル成長の生産性が
大幅に向上した。 Therefore, the need to set various growth conditions and the number of preparation steps associated with changing the boat are reduced, the reliability of the boat is increased, and the productivity of liquid phase epitaxial growth is greatly improved.
なお、本発明は使用材料、および使用基板、浴
槽サイズに応じた、種々のスライド式液相エピタ
キシヤル成長用ボートに適用できる。 The present invention can be applied to various slide-type liquid phase epitaxial growth boats depending on the materials used, the substrates used, and the bath sizes.
以上のとおり、本発明による液相成長ボートに
よれば、エピタキシヤル成長層の組成比が良好に
制御されつつ、表面に傷のない良質なエピタキシ
ヤル成長層が提供される。
As described above, according to the liquid phase growth boat of the present invention, the composition ratio of the epitaxially grown layer is well controlled, and a high quality epitaxially grown layer with no scratches on the surface is provided.
第１図ＡおよびＢは夫々本発明の一実施例を構
成する各部の部分斜視断面図、同図Ｃは同図Ａ，
Ｂの構成部材を嵌合した断面図、第２図は従来例
を示す斜視図である。
１０……浴槽、２０……基板ウエーハスライド
板（スライダー）、２０１……結晶保持部、３０
……ガイド、４０……微調整用止めネジ、１０１
……間〓、２０２……間取り部、５０……半導体
ウエーハ。
1A and 1B are partial perspective sectional views of various parts constituting one embodiment of the present invention, and FIG.
FIG. 2 is a cross-sectional view showing the fitting of the constituent members B, and FIG. 2 is a perspective view showing a conventional example. DESCRIPTION OF SYMBOLS 10... Bathtub, 20... Substrate wafer slide plate (slider), 201... Crystal holding part, 30
... Guide, 40 ... Set screw for fine adjustment, 101
...Main =, 202... Floor plan, 50... Semiconductor wafer.
Claims (1)
納保持するガイド部とを有するスライド式の液相
エピタキシヤル成長用ボードにおいて、前記浴槽
部の内壁底内部の外稜に間〓を有し、かつ、前記
ウエーハスライド板の結晶保持部くりぬき部の外
周を面取りしたことを特徴とする液晶エピタキシ
ヤル成長用ボード。1. A sliding type liquid phase epitaxial growth board having a bathtub section, a wafer slide plate, and a guide section for storing and holding both, which has a gap at the outer ridge inside the bottom of the inner wall of the bathtub section, and . A board for liquid crystal epitaxial growth, characterized in that the outer periphery of the hollowed out portion of the crystal holding portion of the wafer slide plate is chamfered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19090584A JPS6169119A (en) | 1984-09-12 | 1984-09-12 | Boat for liquid-phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19090584A JPS6169119A (en) | 1984-09-12 | 1984-09-12 | Boat for liquid-phase epitaxial growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6169119A JPS6169119A (en) | 1986-04-09 |
| JPH0534820B2 true JPH0534820B2 (en) | 1993-05-25 |
Family
ID=16265665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19090584A Granted JPS6169119A (en) | 1984-09-12 | 1984-09-12 | Boat for liquid-phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6169119A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4945683A (en) * | 1972-09-01 | 1974-05-01 | ||
| JPS49110271A (en) * | 1973-02-21 | 1974-10-21 | ||
| JPS5364465A (en) * | 1976-11-19 | 1978-06-08 | Mitsubishi Electric Corp | Semiconductor crystal production apparatus |
| JPS54137990A (en) * | 1978-04-18 | 1979-10-26 | Toshiba Corp | Manufacture of gallium-phosphide red luminous element |
-
1984
- 1984-09-12 JP JP19090584A patent/JPS6169119A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4945683A (en) * | 1972-09-01 | 1974-05-01 | ||
| JPS49110271A (en) * | 1973-02-21 | 1974-10-21 | ||
| JPS5364465A (en) * | 1976-11-19 | 1978-06-08 | Mitsubishi Electric Corp | Semiconductor crystal production apparatus |
| JPS54137990A (en) * | 1978-04-18 | 1979-10-26 | Toshiba Corp | Manufacture of gallium-phosphide red luminous element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6169119A (en) | 1986-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |