JPS56120183A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS56120183A
JPS56120183A JP2391080A JP2391080A JPS56120183A JP S56120183 A JPS56120183 A JP S56120183A JP 2391080 A JP2391080 A JP 2391080A JP 2391080 A JP2391080 A JP 2391080A JP S56120183 A JPS56120183 A JP S56120183A
Authority
JP
Japan
Prior art keywords
stripes
electrode
substrate
longitudinal direction
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2391080A
Other languages
Japanese (ja)
Other versions
JPS6249999B2 (en
Inventor
Masaaki Oshima
Michio Matsuki
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2391080A priority Critical patent/JPS56120183A/en
Publication of JPS56120183A publication Critical patent/JPS56120183A/en
Publication of JPS6249999B2 publication Critical patent/JPS6249999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To decrease a threshold value current by setting a striped electrode of a laser element having an epitaxial layer containing three kinds of elements among In, Ga, As and P so that the longitudinal direction thereof may correspond with the strong direction of the lattice stripes of a substrate on the (100) surface of the substrate containing Ga, P and As. CONSTITUTION:The growth values of GaAsP on the (100) surface of GaAs occur the lattice stripes having uneveness which cross at right angles one another in the (110) direction, said stripes being plentiful in the horizontal CD direction, but few in the longitudinal direction. A double hetero-epitaxial growth is performed by a liquid phase on such substrate. The first clad layer 2, active layer 3, and a second clad layer 4 are allowed to grow on a GaAsP. In this case, the sectional surface (cleveage) of AB has a plenty of uneveness, but the sectional surface of CD is a very even growth surface. When the stripes electrode is formed on the wafer, if the longitudinal direction of the electrode is formed parallel to the CD direction, the threshold value current can decreased extremely.
JP2391080A 1980-02-27 1980-02-27 Semiconductor laser element Granted JPS56120183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2391080A JPS56120183A (en) 1980-02-27 1980-02-27 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2391080A JPS56120183A (en) 1980-02-27 1980-02-27 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS56120183A true JPS56120183A (en) 1981-09-21
JPS6249999B2 JPS6249999B2 (en) 1987-10-22

Family

ID=12123629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2391080A Granted JPS56120183A (en) 1980-02-27 1980-02-27 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS56120183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102970A (en) * 1981-12-16 1983-06-18 Konishiroku Photo Ind Co Ltd Laser recorder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102970A (en) * 1981-12-16 1983-06-18 Konishiroku Photo Ind Co Ltd Laser recorder

Also Published As

Publication number Publication date
JPS6249999B2 (en) 1987-10-22

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