JPS5664489A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5664489A
JPS5664489A JP14035679A JP14035679A JPS5664489A JP S5664489 A JPS5664489 A JP S5664489A JP 14035679 A JP14035679 A JP 14035679A JP 14035679 A JP14035679 A JP 14035679A JP S5664489 A JPS5664489 A JP S5664489A
Authority
JP
Japan
Prior art keywords
layer
gaalasp
clad
gaas
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14035679A
Other languages
Japanese (ja)
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14035679A priority Critical patent/JPS5664489A/en
Publication of JPS5664489A publication Critical patent/JPS5664489A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To set a mixed crystal of a clad layer at a target value by a method wherein a GaAlAsP layer is put on a GaAs substrate as a preparatory growth layer, and the clad layer and an active layer are laminated on the layer. CONSTITUTION:N-GaAlAsP is placed on an N-GaAs substrate 1 as a preparatory growth layer 6, and N-GaAlAsP is grown on the layer 6 as the first layer 2 furnctioning as a clad layer. P-GaAlAs or P-GaAs as the second layer 3 working as an active layer, P-GaAlAsP as the third layer 4 serving as a clad layer and P<+>-GaAs as the fourth layer 5 functioning as a contact layer are successively laminated. Thus, the mixed-crystal ratio of the layer 2 grown on the layer 6 is kept at a fixed value.
JP14035679A 1979-10-29 1979-10-29 Semiconductor laser element Pending JPS5664489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14035679A JPS5664489A (en) 1979-10-29 1979-10-29 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14035679A JPS5664489A (en) 1979-10-29 1979-10-29 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS5664489A true JPS5664489A (en) 1981-06-01

Family

ID=15266914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14035679A Pending JPS5664489A (en) 1979-10-29 1979-10-29 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5664489A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0616399A1 (en) * 1993-03-16 1994-09-21 Mitsubishi Chemical Corporation Laser diode and process for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0616399A1 (en) * 1993-03-16 1994-09-21 Mitsubishi Chemical Corporation Laser diode and process for producing the same
US5608751A (en) * 1993-03-16 1997-03-04 Mitsubishi Chemical Corporation Laser diode and process for producing the same

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