JPS5664489A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS5664489A JPS5664489A JP14035679A JP14035679A JPS5664489A JP S5664489 A JPS5664489 A JP S5664489A JP 14035679 A JP14035679 A JP 14035679A JP 14035679 A JP14035679 A JP 14035679A JP S5664489 A JPS5664489 A JP S5664489A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaalasp
- clad
- gaas
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To set a mixed crystal of a clad layer at a target value by a method wherein a GaAlAsP layer is put on a GaAs substrate as a preparatory growth layer, and the clad layer and an active layer are laminated on the layer. CONSTITUTION:N-GaAlAsP is placed on an N-GaAs substrate 1 as a preparatory growth layer 6, and N-GaAlAsP is grown on the layer 6 as the first layer 2 furnctioning as a clad layer. P-GaAlAs or P-GaAs as the second layer 3 working as an active layer, P-GaAlAsP as the third layer 4 serving as a clad layer and P<+>-GaAs as the fourth layer 5 functioning as a contact layer are successively laminated. Thus, the mixed-crystal ratio of the layer 2 grown on the layer 6 is kept at a fixed value.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14035679A JPS5664489A (en) | 1979-10-29 | 1979-10-29 | Semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14035679A JPS5664489A (en) | 1979-10-29 | 1979-10-29 | Semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5664489A true JPS5664489A (en) | 1981-06-01 |
Family
ID=15266914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14035679A Pending JPS5664489A (en) | 1979-10-29 | 1979-10-29 | Semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5664489A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0616399A1 (en) * | 1993-03-16 | 1994-09-21 | Mitsubishi Chemical Corporation | Laser diode and process for producing the same |
-
1979
- 1979-10-29 JP JP14035679A patent/JPS5664489A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0616399A1 (en) * | 1993-03-16 | 1994-09-21 | Mitsubishi Chemical Corporation | Laser diode and process for producing the same |
US5608751A (en) * | 1993-03-16 | 1997-03-04 | Mitsubishi Chemical Corporation | Laser diode and process for producing the same |
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