JPS52149081A - Semiconductor laser of double hetero structure - Google Patents

Semiconductor laser of double hetero structure

Info

Publication number
JPS52149081A
JPS52149081A JP6515376A JP6515376A JPS52149081A JP S52149081 A JPS52149081 A JP S52149081A JP 6515376 A JP6515376 A JP 6515376A JP 6515376 A JP6515376 A JP 6515376A JP S52149081 A JPS52149081 A JP S52149081A
Authority
JP
Japan
Prior art keywords
semiconductor laser
hetero structure
double hetero
dislocations
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6515376A
Other languages
Japanese (ja)
Other versions
JPS5625036B2 (en
Inventor
Seiji Ohara
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6515376A priority Critical patent/JPS52149081A/en
Publication of JPS52149081A publication Critical patent/JPS52149081A/en
Publication of JPS5625036B2 publication Critical patent/JPS5625036B2/ja
Granted legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain a semiconductor laser having a longer life by dispersing the concentration of point defects into their dislocations, increasing the intensity of an active layer and preventing its deterioration with the use of GaAs of very high dislocation density.
COPYRIGHT: (C)1977,JPO&Japio
JP6515376A 1976-06-05 1976-06-05 Semiconductor laser of double hetero structure Granted JPS52149081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6515376A JPS52149081A (en) 1976-06-05 1976-06-05 Semiconductor laser of double hetero structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6515376A JPS52149081A (en) 1976-06-05 1976-06-05 Semiconductor laser of double hetero structure

Publications (2)

Publication Number Publication Date
JPS52149081A true JPS52149081A (en) 1977-12-10
JPS5625036B2 JPS5625036B2 (en) 1981-06-10

Family

ID=13278641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6515376A Granted JPS52149081A (en) 1976-06-05 1976-06-05 Semiconductor laser of double hetero structure

Country Status (1)

Country Link
JP (1) JPS52149081A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997004509A2 (en) * 1995-07-19 1997-02-06 Siemens Aktiengesellschaft Semiconductor laser chip and infrared emitter component

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61167143A (en) * 1985-01-18 1986-07-28 Honda Motor Co Ltd Cooling apparatus for cylinder block of water cooling type multicylinder internal-combustion engine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997004509A2 (en) * 1995-07-19 1997-02-06 Siemens Aktiengesellschaft Semiconductor laser chip and infrared emitter component
WO1997004509A3 (en) * 1995-07-19 2002-02-14 Siemens Ag Semiconductor laser chip and infrared emitter component

Also Published As

Publication number Publication date
JPS5625036B2 (en) 1981-06-10

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