JPS54113289A - Semiconductor luminous device - Google Patents

Semiconductor luminous device

Info

Publication number
JPS54113289A
JPS54113289A JP2054578A JP2054578A JPS54113289A JP S54113289 A JPS54113289 A JP S54113289A JP 2054578 A JP2054578 A JP 2054578A JP 2054578 A JP2054578 A JP 2054578A JP S54113289 A JPS54113289 A JP S54113289A
Authority
JP
Japan
Prior art keywords
layer
generated
type
face
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2054578A
Other languages
Japanese (ja)
Inventor
Etsuji Omura
Kenji Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2054578A priority Critical patent/JPS54113289A/en
Publication of JPS54113289A publication Critical patent/JPS54113289A/en
Pending legal-status Critical Current

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Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain a laser with monitor where troublesome positioning is needless at an assembling time and positional slippage is not generated by the vibration in a using time.
CONSTITUTION: N-type GaAlAs 11b, n-type GaAs 11c, and n-type GaAlAs 11d are laminated on face (100) of n-type GaAs substrate 11a, and p-type layers 12 and 13 which have a depth to reach layer 11b are formed at a interval of approximately 10μm by Zn diffusion from main face 11e. Next, after annealing, AuCr alloy electrodes 14 and 15 and AuNi electrode 16 are provided on main face 1 and reverse face 11f respectively. When a voltage is applied as prescribed, laser beam is emitted in active layer 12, and potential difference is generated in layer 13 correspondingly to the light output of layre 12. Then, since the potential difference corresponding to the light output of layer 12 is generated in monitoring resistance 18, the power source is controlled according to this change to obtain a stable laser output. In this constitution, light emission part 12 and light receiving part 13 are provided in the same substrate, so that positional slippage can be prevented.
COPYRIGHT: (C)1979,JPO&Japio
JP2054578A 1978-02-23 1978-02-23 Semiconductor luminous device Pending JPS54113289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2054578A JPS54113289A (en) 1978-02-23 1978-02-23 Semiconductor luminous device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2054578A JPS54113289A (en) 1978-02-23 1978-02-23 Semiconductor luminous device

Publications (1)

Publication Number Publication Date
JPS54113289A true JPS54113289A (en) 1979-09-04

Family

ID=12030115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2054578A Pending JPS54113289A (en) 1978-02-23 1978-02-23 Semiconductor luminous device

Country Status (1)

Country Link
JP (1) JPS54113289A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172790A (en) * 1981-04-16 1982-10-23 Mitsubishi Electric Corp Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172790A (en) * 1981-04-16 1982-10-23 Mitsubishi Electric Corp Semiconductor laser device

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