JPS5624987A - Gaas infrared ray emitting diode and manufacture thereof - Google Patents

Gaas infrared ray emitting diode and manufacture thereof

Info

Publication number
JPS5624987A
JPS5624987A JP10197879A JP10197879A JPS5624987A JP S5624987 A JPS5624987 A JP S5624987A JP 10197879 A JP10197879 A JP 10197879A JP 10197879 A JP10197879 A JP 10197879A JP S5624987 A JPS5624987 A JP S5624987A
Authority
JP
Japan
Prior art keywords
layer
added
gaas
type gaas
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10197879A
Other languages
Japanese (ja)
Inventor
Susumu Yoshida
Kotaro Mitsui
Takao Oda
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10197879A priority Critical patent/JPS5624987A/en
Publication of JPS5624987A publication Critical patent/JPS5624987A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Abstract

PURPOSE:To obtain an LED having high light emitting efficiency and high response speed by superimposing Si-added GaAs onto Si-added n type GaAs and laminating further p type GaAs and Ga1-xAlxAs thereon. CONSTITUTION:Si-added n type GaAs layer 12, Zn-added p type GaAs 13a and p type Ga1-xAlxAs 13b having the same thickness as the GaAs 13a are laminated on an Si-added n+ type GaAs substrate 11. An Au-Zn alloy electrode 15 is attached onto the layer 13, and an Au-Ge alloy electrode 14 is attached onto the substrate 11. In this configuration, electrons injected to the P-N junction 16 are enclosed in the layer 13a through potential barrier of the hetero boundary between the layers 13a and 13b to reduce the recombination of the non-radiation on the surface. Accordingly, light is efficiently emitted in the layer 13a, the layer 13b is transparent to reduce the decrease of the efficiency. Therefore, the light emitting response speed may be increased by reducing the thickness of the active layer 13a.
JP10197879A 1979-08-08 1979-08-08 Gaas infrared ray emitting diode and manufacture thereof Pending JPS5624987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10197879A JPS5624987A (en) 1979-08-08 1979-08-08 Gaas infrared ray emitting diode and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10197879A JPS5624987A (en) 1979-08-08 1979-08-08 Gaas infrared ray emitting diode and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5624987A true JPS5624987A (en) 1981-03-10

Family

ID=14314939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10197879A Pending JPS5624987A (en) 1979-08-08 1979-08-08 Gaas infrared ray emitting diode and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5624987A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0115204A2 (en) * 1982-12-27 1984-08-08 Mitsubishi Kasei Polytec Company Epitaxial wafer for use in the production of an infrared LED
JPH02251179A (en) * 1989-03-24 1990-10-08 Nichia Chem Ind Ltd Epitaxial wafer
WO1991006139A1 (en) * 1989-10-20 1991-05-02 Australian Electro Optics Pty. Ltd. Diode pumped segmented fibre bundle coupled conical rod laser system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0115204A2 (en) * 1982-12-27 1984-08-08 Mitsubishi Kasei Polytec Company Epitaxial wafer for use in the production of an infrared LED
JPH02251179A (en) * 1989-03-24 1990-10-08 Nichia Chem Ind Ltd Epitaxial wafer
WO1991006139A1 (en) * 1989-10-20 1991-05-02 Australian Electro Optics Pty. Ltd. Diode pumped segmented fibre bundle coupled conical rod laser system

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