JPS5593277A - Semiconductor light transmissiong and receiving device - Google Patents
Semiconductor light transmissiong and receiving deviceInfo
- Publication number
- JPS5593277A JPS5593277A JP49279A JP49279A JPS5593277A JP S5593277 A JPS5593277 A JP S5593277A JP 49279 A JP49279 A JP 49279A JP 49279 A JP49279 A JP 49279A JP S5593277 A JPS5593277 A JP S5593277A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- receiving
- sending
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
PURPOSE: To attain light transmitting and receivisng device of high efficiency by making light-sending and light-receiving function possible to optimize respectively and independently so that, though light-receiving area is limited, light-sending can be performed throughout the whole area.
CONSTITUTION: On one face of substrate 1 of n-type semiconductor are provided electrodes 2 and 3 separated from each other, while on the other face are laid layers having p+ part 4 and a p- part 5, on both parts of which is provided an electrode 6. With electrode 2 is connected a diode 7. When electrode 8 is earthed and positive voltage is given to electrode 9, layers 4 and 5 emit light. When negative voltage is given to electrode 9, only junction of layers 5 and 1 produces light-receiving mode by the effect of diode 7 and only the incident light to layer 5 is detected. On p+-layer 4 light-emitting of high efficiency occurs, while on p--layer 5 light-receiving of high efficiency takes olace. Moreover, even if high inverse voltage is impressed on p+- layer 4, the breakdown is prevented by diode 7. In this way, light-sending and light-receiving areas can be formed respectively with optimum carrier concentration and both can be made to act with high efficiency as light-sending and light-receiving modes recpectively.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49279A JPS5593277A (en) | 1979-01-05 | 1979-01-05 | Semiconductor light transmissiong and receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49279A JPS5593277A (en) | 1979-01-05 | 1979-01-05 | Semiconductor light transmissiong and receiving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5593277A true JPS5593277A (en) | 1980-07-15 |
Family
ID=11475248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49279A Pending JPS5593277A (en) | 1979-01-05 | 1979-01-05 | Semiconductor light transmissiong and receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5593277A (en) |
-
1979
- 1979-01-05 JP JP49279A patent/JPS5593277A/en active Pending
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