JPS562693A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS562693A
JPS562693A JP7690379A JP7690379A JPS562693A JP S562693 A JPS562693 A JP S562693A JP 7690379 A JP7690379 A JP 7690379A JP 7690379 A JP7690379 A JP 7690379A JP S562693 A JPS562693 A JP S562693A
Authority
JP
Japan
Prior art keywords
layer
light
resonator
laser
optical axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7690379A
Other languages
Japanese (ja)
Inventor
Yunosuke Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP7690379A priority Critical patent/JPS562693A/en
Publication of JPS562693A publication Critical patent/JPS562693A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To reduce the density of light on laser end faces and heighten the density of radiation recombination carriers, by providing gradient portions which extend from the interior of a laser activation region to the end faces and perpendicularly intersect an optical axis. CONSTITUTION:A light resonator 2 is interposed between light enclosing layers 5, 6 and a striped portion 10' parallel with an optical axis I is provided on the surface of the layer 6 so that a laser device 1 is constituted. The layer 5 comprises an N-type semiconductor substrate 7 and a lead electrode 8. The other layer 6 comprises a P-type semiconductor layer 9, a PN inverse bias junction layer 11 and a lead electrode 10. The light resonator 2 is made of a hetero junction which is provided by interposing a carrier radiation recombination layer 21 between an upper and a lower light paths 22, 23. The light resonator 2 does not extend in parallel with the light enclosing layers 5, 6. Gradient portions 22f, 23f extending toward the electrodes 8, 10 are provided in the light paths 22, 23 at a coupling layer portion 21f located at the end of a coupling layer 21.
JP7690379A 1979-06-20 1979-06-20 Semiconductor laser device Pending JPS562693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7690379A JPS562693A (en) 1979-06-20 1979-06-20 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7690379A JPS562693A (en) 1979-06-20 1979-06-20 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS562693A true JPS562693A (en) 1981-01-12

Family

ID=13618616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7690379A Pending JPS562693A (en) 1979-06-20 1979-06-20 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS562693A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880888A (en) * 1981-11-09 1983-05-16 Nec Corp Integrated semiconductor laser
JPH01109789A (en) * 1987-10-22 1989-04-26 Mitsubishi Electric Corp Light amplifier
JPH01268084A (en) * 1988-04-19 1989-10-25 Nec Corp Semiconductor light amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333080A (en) * 1976-09-08 1978-03-28 Nippon Telegr & Teleph Corp <Ntt> Light emitting semiconductor device and its production
JPS5335392A (en) * 1976-09-13 1978-04-01 Sharp Corp Mode controlled semiconductor laser
JPS5356986A (en) * 1976-11-02 1978-05-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333080A (en) * 1976-09-08 1978-03-28 Nippon Telegr & Teleph Corp <Ntt> Light emitting semiconductor device and its production
JPS5335392A (en) * 1976-09-13 1978-04-01 Sharp Corp Mode controlled semiconductor laser
JPS5356986A (en) * 1976-11-02 1978-05-23 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880888A (en) * 1981-11-09 1983-05-16 Nec Corp Integrated semiconductor laser
JPH01109789A (en) * 1987-10-22 1989-04-26 Mitsubishi Electric Corp Light amplifier
JPH01268084A (en) * 1988-04-19 1989-10-25 Nec Corp Semiconductor light amplifier

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