JPS5643794A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5643794A
JPS5643794A JP12029979A JP12029979A JPS5643794A JP S5643794 A JPS5643794 A JP S5643794A JP 12029979 A JP12029979 A JP 12029979A JP 12029979 A JP12029979 A JP 12029979A JP S5643794 A JPS5643794 A JP S5643794A
Authority
JP
Japan
Prior art keywords
layer
carrier
groove
thick
confining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12029979A
Other languages
Japanese (ja)
Other versions
JPS6237833B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12029979A priority Critical patent/JPS5643794A/en
Publication of JPS5643794A publication Critical patent/JPS5643794A/en
Publication of JPS6237833B2 publication Critical patent/JPS6237833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Abstract

PURPOSE:To obtain a nonend expanding light emitting pattern by forming a light guiding layer, an active layer and a carrier-confining layer on a semiconductor substrate having a groove while a light absorbing layer is formed in a portion of the carrier-confining layer in such manner as not to correspond to the groove. CONSTITUTION:A groove 16 is formed in a semiconductor substrate 8 of an N type InP. On the groove, provided are a light guiding layer 9 of an N type In0.88Ga0.12 As0.26P0.740.3mum thick, an active layer 10 of In0.77Ga0.23As0.55P0.450.1mum thick and a carrier confining layer 11 of an N type In0.75 Ga0.26As0.6P0.42mum thick. A light absorbing layer 12 is provided only on the carrier-confining layer 11 positioned outside the groove 16. Electrodes 14 and 15 are mounted on the top and bottom of the laminate. This enable the light emitting pattern to come close to the Gaus distribution while reducing laterally spreading current in the carrier-confining layer thereby improving the injection efficiency.
JP12029979A 1979-09-18 1979-09-18 Semiconductor laser Granted JPS5643794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12029979A JPS5643794A (en) 1979-09-18 1979-09-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12029979A JPS5643794A (en) 1979-09-18 1979-09-18 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5643794A true JPS5643794A (en) 1981-04-22
JPS6237833B2 JPS6237833B2 (en) 1987-08-14

Family

ID=14782789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12029979A Granted JPS5643794A (en) 1979-09-18 1979-09-18 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5643794A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114473A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Semiconductor light emitting device
JPS59189693A (en) * 1983-04-12 1984-10-27 Mitsubishi Electric Corp Semiconductor laser device
JPS59231890A (en) * 1983-06-14 1984-12-26 日立化成工業株式会社 Method of forming through hole conductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114473A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Semiconductor light emitting device
JPS59189693A (en) * 1983-04-12 1984-10-27 Mitsubishi Electric Corp Semiconductor laser device
JPS59231890A (en) * 1983-06-14 1984-12-26 日立化成工業株式会社 Method of forming through hole conductor
JPS6357958B2 (en) * 1983-06-14 1988-11-14 Hitachi Chemical Co Ltd

Also Published As

Publication number Publication date
JPS6237833B2 (en) 1987-08-14

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