JPS5724562A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5724562A JPS5724562A JP10019780A JP10019780A JPS5724562A JP S5724562 A JPS5724562 A JP S5724562A JP 10019780 A JP10019780 A JP 10019780A JP 10019780 A JP10019780 A JP 10019780A JP S5724562 A JPS5724562 A JP S5724562A
- Authority
- JP
- Japan
- Prior art keywords
- type
- thyristor
- layer
- emitter layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007257 malfunction Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To raise the gate-trigger current, by roughing the surface including the exposed part of a P-N junction formed by providing selectively an N type emitter layer on the upper face side in the P type base layer of a thyristor. CONSTITUTION:The surface is roughed including the exposed part of the upper surface of the P-N junction formed by a P type base layer 3 and an N type emitter layer 4 of a thyristor comprising a P type emitter layer 1, an N type base layer 2, a P type layer 3, an N type emitter layer 4 an anode electrode 11, a cathode electrode 12, and a gate electrode 13. Thus, the carrier lifetime near the surface shortens, and the gate-trigger current is made about several 10muA. Accordingly, it is possible to form a highly sensitive thyristor, which is not liable to malfunction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10019780A JPS5724562A (en) | 1980-07-22 | 1980-07-22 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10019780A JPS5724562A (en) | 1980-07-22 | 1980-07-22 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5724562A true JPS5724562A (en) | 1982-02-09 |
Family
ID=14267571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10019780A Pending JPS5724562A (en) | 1980-07-22 | 1980-07-22 | Thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5724562A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009148100A (en) * | 2007-12-15 | 2009-07-02 | Tokyo Electron Ltd | Power controller, heat treatment apparatus using it, power control method, and storage medium |
-
1980
- 1980-07-22 JP JP10019780A patent/JPS5724562A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009148100A (en) * | 2007-12-15 | 2009-07-02 | Tokyo Electron Ltd | Power controller, heat treatment apparatus using it, power control method, and storage medium |
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