JPS5727095A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5727095A
JPS5727095A JP10227380A JP10227380A JPS5727095A JP S5727095 A JPS5727095 A JP S5727095A JP 10227380 A JP10227380 A JP 10227380A JP 10227380 A JP10227380 A JP 10227380A JP S5727095 A JPS5727095 A JP S5727095A
Authority
JP
Japan
Prior art keywords
layer
type
type gaas
becomes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10227380A
Other languages
Japanese (ja)
Inventor
Yukio Watanabe
Naoto Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10227380A priority Critical patent/JPS5727095A/en
Publication of JPS5727095A publication Critical patent/JPS5727095A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To have both an inner stripe structure and a CSP (channeled substrate planar) structure in an inner current confining type semiconductor laser by providing a stripe shaped V groove having the depth reaching a substrate. CONSTITUTION:On an N type GaAs substrate 1, a P type GaAs layer 21 and an N type GaAs layer 51 are formed. The stripe shaped V groove 31 having the depth reaching the substrate 1 is formed. On the layer 51, are layered an N type GaAlAs layer 2 which becomes a clad layer, a P type GaAs layer 3 which becomes an active layer, a P type GaAs layer 3 which becomes an active layer, a P type GaAlAs layer 4 which becomes a clad layer, and a P type GaAs layer 5 which obtains an ohmic contact. On both sides of the device, a P side electrode 8 and N type electrode 9 are deposited.
JP10227380A 1980-07-25 1980-07-25 Semiconductor light emitting device Pending JPS5727095A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10227380A JPS5727095A (en) 1980-07-25 1980-07-25 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10227380A JPS5727095A (en) 1980-07-25 1980-07-25 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5727095A true JPS5727095A (en) 1982-02-13

Family

ID=14322986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10227380A Pending JPS5727095A (en) 1980-07-25 1980-07-25 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5727095A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712219A (en) * 1984-03-29 1987-12-08 Sharp Kabushiki Kaisha Visible double heterostructure-semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712219A (en) * 1984-03-29 1987-12-08 Sharp Kabushiki Kaisha Visible double heterostructure-semiconductor laser

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