JPS5624994A - Semiconductor light emitting element and manufacture thereof - Google Patents
Semiconductor light emitting element and manufacture thereofInfo
- Publication number
- JPS5624994A JPS5624994A JP10156679A JP10156679A JPS5624994A JP S5624994 A JPS5624994 A JP S5624994A JP 10156679 A JP10156679 A JP 10156679A JP 10156679 A JP10156679 A JP 10156679A JP S5624994 A JPS5624994 A JP S5624994A
- Authority
- JP
- Japan
- Prior art keywords
- type
- route
- gaas
- type gaas
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain high output power from the semiconductor light emitting element with narrow radiation angle by surrounding the right and left sides of a P type GaAs active layer with P and N type GaAlAs layers and the upper and the lower sides thereof with P type and N type GaAs layers and selecting the refractive index lower than the active layer. CONSTITUTION:P type GaAsAl11, P type GaAs 12 and P type GaAs 13 are laminated on predetermined portions on a P type GaAs substrate 10. P type GaAl As 14 and N type GaAlAs 15 are formed on a substrate 10 in contact with the side surfaces of the layers 11 and 12, and ohmic electrodes 16, 17 are attached thereto. When the electrode 16 is positively biased, a current is branched into the first route of 10-11-13 and the second route of 10-14-15. Since the GaAs has narrower forbidden band width than the GaAlAs, the first route has accordingly lower potential barrier so that a current is selectively flowed, and when aluminum composition is increased, the current is concentrated almost in the first route. When the active layer 12 is suitably selected in thickness (d) and the width W, large light output power can be irradiated in narrow radiation angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10156679A JPS5624994A (en) | 1979-08-06 | 1979-08-06 | Semiconductor light emitting element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10156679A JPS5624994A (en) | 1979-08-06 | 1979-08-06 | Semiconductor light emitting element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5624994A true JPS5624994A (en) | 1981-03-10 |
Family
ID=14303950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10156679A Pending JPS5624994A (en) | 1979-08-06 | 1979-08-06 | Semiconductor light emitting element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5624994A (en) |
-
1979
- 1979-08-06 JP JP10156679A patent/JPS5624994A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57170584A (en) | Semiconductor laser device | |
| JPS5710992A (en) | Semiconductor device and manufacture therefor | |
| JPS5624994A (en) | Semiconductor light emitting element and manufacture thereof | |
| JPS58200584A (en) | Semiconductor light emitting device | |
| JPS57162382A (en) | Semiconductor laser | |
| US3470427A (en) | Semiconductor laser devices | |
| JPS5591892A (en) | Semiconductor laser light emission device | |
| JPS5687390A (en) | Semiconductor laser | |
| JPS551164A (en) | Method of fabricating semiconductor laser device | |
| JPS56110288A (en) | Semiconductor laser element | |
| JPS647681A (en) | Distributed reflex semiconductor laser | |
| JPS5518078A (en) | Semiconductor light emission device | |
| JPH07202259A (en) | Gaalas light emitting diode | |
| JPS5640294A (en) | Semiconductor laser | |
| JPS5624987A (en) | Gaas infrared ray emitting diode and manufacture thereof | |
| JPS5643794A (en) | Semiconductor laser | |
| JPS5654084A (en) | Compound semiconductor laser apparatus | |
| JPS5688376A (en) | Schottky barrier diode with p-n junction | |
| JPS61276389A (en) | Semiconductor optical element | |
| JPS5778193A (en) | Semiconductor laser | |
| JPS57162381A (en) | Buried type semiconductor laser element | |
| JPS6418293A (en) | Semiconductor laser device | |
| JPH067630B2 (en) | Three-terminal semiconductor laser device | |
| JPS5732692A (en) | Semiconductor laser device | |
| JPS5456385A (en) | Wavelength variable distribution feedback type semiconductor laser device |