JPS5640294A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5640294A
JPS5640294A JP11770179A JP11770179A JPS5640294A JP S5640294 A JPS5640294 A JP S5640294A JP 11770179 A JP11770179 A JP 11770179A JP 11770179 A JP11770179 A JP 11770179A JP S5640294 A JPS5640294 A JP S5640294A
Authority
JP
Japan
Prior art keywords
layer
type
band width
forbidden
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11770179A
Other languages
Japanese (ja)
Inventor
Hirobumi Namisaki
Hisao Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11770179A priority Critical patent/JPS5640294A/en
Publication of JPS5640294A publication Critical patent/JPS5640294A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To decrease the radiation angle of the light beam from a semiconductor laser and to permit it to be readily cnnected to other optical circuits by providing one conductivity-type and the other conductivity-type regions each having a prescribed refractive index and forbidden-band width on both sides of one conductivity- type active region in order to ease the light-shutting. CONSTITUTION:Provided on one side of a P type GaAs layer 2 having an active region is an N type GaAlAs layer 1 having a smaller refractive index and a wider forbidden-band width than the layer 2 and a high Al concentration. Provided on this side, moreover, is an N type GaAlAs layer 4 having a low Al concentration and a wider forbidden-band width than both the layer 2 and a P type GaAlAs layer 3 to be provided on the other side of the layer 2. Provided on the layer 3 is a P type GaAlAs layer 5 having a low Al concentration and the same forbidden- band width as the layer 4. In the constitution, the thicknesses of the layers 1 and 3 are made thinner than the others so that the light-shutting is eased and the skirts of the intensity distribution are allowed to enter the layers 4 and 5. Consequently, the radiation angle of the light beam as well as the threshold current are decreased.
JP11770179A 1979-09-11 1979-09-11 Semiconductor laser Pending JPS5640294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11770179A JPS5640294A (en) 1979-09-11 1979-09-11 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11770179A JPS5640294A (en) 1979-09-11 1979-09-11 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5640294A true JPS5640294A (en) 1981-04-16

Family

ID=14718160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11770179A Pending JPS5640294A (en) 1979-09-11 1979-09-11 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5640294A (en)

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