JPS57173993A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS57173993A
JPS57173993A JP5885181A JP5885181A JPS57173993A JP S57173993 A JPS57173993 A JP S57173993A JP 5885181 A JP5885181 A JP 5885181A JP 5885181 A JP5885181 A JP 5885181A JP S57173993 A JPS57173993 A JP S57173993A
Authority
JP
Japan
Prior art keywords
inp
layers
active region
constituted
central part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5885181A
Other languages
Japanese (ja)
Inventor
Etsuji Omura
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5885181A priority Critical patent/JPS57173993A/en
Publication of JPS57173993A publication Critical patent/JPS57173993A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To stabilize transverse mode with low threshold value, by constituting a central part of active regions among clad layers adjacent to the active regions of semiconductor layers with high refractive indexes and the periphery thereof of those with low ones. CONSTITUTION:Among the clad layers adjacent to the active region 7, layers on an N-InP semiconductor substrate 8 side are constituted of two parts the first semiconductor layer 9 of N-InP and second one 10 of P-InP. In general, in III-V group compound semiconductors of InP, etc., P types of conductivity types have refractive indexes some higher than those of N types. Therefore, in the central part of the active region 7, clad layers are constituted of a layer 10 with high refractive index. On the other hand, in the periphery separated from the region 7, they are constituted of the layers 10 and 9. As the result, the central part of the active region 7 has high effective refractive index with the width L with laser light stabilized to exist in the active region 7.
JP5885181A 1981-04-17 1981-04-17 Semiconductor laser Pending JPS57173993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5885181A JPS57173993A (en) 1981-04-17 1981-04-17 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5885181A JPS57173993A (en) 1981-04-17 1981-04-17 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57173993A true JPS57173993A (en) 1982-10-26

Family

ID=13096174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5885181A Pending JPS57173993A (en) 1981-04-17 1981-04-17 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57173993A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273687A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273687A (en) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp Semiconductor laser device

Similar Documents

Publication Publication Date Title
EP0083980A3 (en) Injection lasers
GB1484594A (en) Heterostructure junction lasers
GB2114804A (en) Distributed feedback semiconductor laser
JPS5756985A (en) Semiconductor laser
JPS57173993A (en) Semiconductor laser
JPS5763885A (en) Semiconductor laser device
JPS5524418A (en) Light integrated circuit
ETSUJI et al. Semiconductor laser
JPS57139984A (en) Buried photo emitting and receiving semiconductor integrated device
JPS5580388A (en) Semiconductor light emitting device
JPS57139982A (en) Semiconductor laser element
JPS5762586A (en) Semiconductor laser
JPS56169387A (en) Semiconductor laser
JPS57112090A (en) Semiconductor laser
JPS57198681A (en) Optical semiconductor
JPS57157586A (en) Semiconductor laser device
JPS5640294A (en) Semiconductor laser
JPS5661187A (en) Buried-type semiconductor light-emitting element
JPS56124288A (en) Single transverse mode semiconductor laser
JPS56112786A (en) Manufacture of semiconductor laser
JITSUJIYUN Buried semiconductor optical element
JPS5778193A (en) Semiconductor laser
JPS5687391A (en) Semiconductor light emitting element
JPS644088A (en) Semiconductor optical modulation element
JPS577181A (en) Semiconductor laser