JPS5661187A - Buried-type semiconductor light-emitting element - Google Patents

Buried-type semiconductor light-emitting element

Info

Publication number
JPS5661187A
JPS5661187A JP13744779A JP13744779A JPS5661187A JP S5661187 A JPS5661187 A JP S5661187A JP 13744779 A JP13744779 A JP 13744779A JP 13744779 A JP13744779 A JP 13744779A JP S5661187 A JPS5661187 A JP S5661187A
Authority
JP
Japan
Prior art keywords
layer
type inp
electrode
emitting element
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13744779A
Other languages
Japanese (ja)
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13744779A priority Critical patent/JPS5661187A/en
Publication of JPS5661187A publication Critical patent/JPS5661187A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To permit a semiconductor light-emitting element to be readily connected to an optical fiber and to be suitable for the wavelength division multiplex transmission by allowing the first and second active layers constituting a light-emitting element to be surrounded with a semiconductor layer having a larger forbidden-band width than the second active layer. CONSTITUTION:On a P type InP substrate 1, an N type InP layer 7 is grown, in which a buried region surrounded with the layer 7 is formed. The buried region is a composite structure comprising a P type InP layer 2, the first active layer 3 of In1-xGaxAsyP1-y (x-0.24, y-0.55) and a N type InP layer 4 from the substrate 1 side, and on this the second active layer 5 of In1-xGaxAsyP1-y (x-0.27, y-0.61) and a P type InP layer 6 are provided. Then, into the surface layer of the layer 6, Zn is diffused to form a P type layer 8, which is provided with an electrode 11. The layer 7 is coated with a ring-shaped electrode 10 surrounding the electrode 11, and the lower surface of the substrate 1 is also coated with an electrode 9. This permits a cheaper and more compact element to provide two adjacent output light beams having different wavelengths.
JP13744779A 1979-10-24 1979-10-24 Buried-type semiconductor light-emitting element Pending JPS5661187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13744779A JPS5661187A (en) 1979-10-24 1979-10-24 Buried-type semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13744779A JPS5661187A (en) 1979-10-24 1979-10-24 Buried-type semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPS5661187A true JPS5661187A (en) 1981-05-26

Family

ID=15198823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13744779A Pending JPS5661187A (en) 1979-10-24 1979-10-24 Buried-type semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS5661187A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63205980A (en) * 1987-02-23 1988-08-25 Anritsu Corp Semiconductor laser
JP2019079932A (en) * 2017-10-25 2019-05-23 ウシオオプトセミコンダクター株式会社 Semiconductor light emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63205980A (en) * 1987-02-23 1988-08-25 Anritsu Corp Semiconductor laser
JP2019079932A (en) * 2017-10-25 2019-05-23 ウシオオプトセミコンダクター株式会社 Semiconductor light emitting device

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