JPS5642386A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS5642386A
JPS5642386A JP11739079A JP11739079A JPS5642386A JP S5642386 A JPS5642386 A JP S5642386A JP 11739079 A JP11739079 A JP 11739079A JP 11739079 A JP11739079 A JP 11739079A JP S5642386 A JPS5642386 A JP S5642386A
Authority
JP
Japan
Prior art keywords
optical fiber
multilayer
light
substrate
forbidden band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11739079A
Other languages
Japanese (ja)
Other versions
JPS6333309B2 (en
Inventor
Hidekazu Suzuki
Suminori Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP11739079A priority Critical patent/JPS5642386A/en
Publication of JPS5642386A publication Critical patent/JPS5642386A/en
Publication of JPS6333309B2 publication Critical patent/JPS6333309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To obtain the photodetector which has narrow effective forbidden band by controlling the impurity density or thickness of a multilayer structure when introducing a light from an optical fiber into a multilayer P-N structure formed on a semiconductor substrate as the photodetector. CONSTITUTION:The structure 1 having a multilayer P-N junctions is formed monolithically on the semiconductor substrate 2, a drawing terminal 6 is connected to the uppermost layer, and the optical fiber 4 is arranged on the one end surface of the structure 1 while positioning with a V-shaped groove 5 formed on the substrate 1. Then, the light 3 from the optical fiber 4 is introduced into the P-N junction of the junction structure 1, and an electric signal thus formed is picked up from the terminal 6 and the substrate 2. In this configuration the impurity density or thickness of at least one of the P type and N type layers of the structure 1 is controlled, and smaller effective forbidden band width than that of the forbidden band intrinsic for the semiconductor forming the structure 1 is formed. Accordingly, it can separate multiwavelength muliple light information and can increase the width of the information transmission band.
JP11739079A 1979-09-14 1979-09-14 Semiconductor photodetector Granted JPS5642386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11739079A JPS5642386A (en) 1979-09-14 1979-09-14 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11739079A JPS5642386A (en) 1979-09-14 1979-09-14 Semiconductor photodetector

Publications (2)

Publication Number Publication Date
JPS5642386A true JPS5642386A (en) 1981-04-20
JPS6333309B2 JPS6333309B2 (en) 1988-07-05

Family

ID=14710458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11739079A Granted JPS5642386A (en) 1979-09-14 1979-09-14 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5642386A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927581A (en) * 1982-08-03 1984-02-14 Seisan Gijutsu Shinko Kyokai Optical sensor
JPS6285476A (en) * 1985-08-30 1987-04-18 サントル・ナシヨナル・ド・ラ・ルシエルシエ・シヤンテイフイク High speed light detection by super lattice and apparatus for the same
JPS6337676A (en) * 1986-07-31 1988-02-18 Anritsu Corp Photoconductive device
JPH01140678A (en) * 1987-11-26 1989-06-01 Matsushita Electric Ind Co Ltd Photodetector
JPH0738124A (en) * 1993-07-22 1995-02-07 Nec Corp Semiconductor photodetector
JPH07231113A (en) * 1993-12-20 1995-08-29 Nec Corp Semiconductor device and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5273686A (en) * 1975-12-16 1977-06-20 Matsushita Electric Ind Co Ltd Production of photoelectric converting element
JPS5289083A (en) * 1976-01-19 1977-07-26 Matsushita Electric Ind Co Ltd Production of semiconductor photoelectric converting element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5273686A (en) * 1975-12-16 1977-06-20 Matsushita Electric Ind Co Ltd Production of photoelectric converting element
JPS5289083A (en) * 1976-01-19 1977-07-26 Matsushita Electric Ind Co Ltd Production of semiconductor photoelectric converting element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927581A (en) * 1982-08-03 1984-02-14 Seisan Gijutsu Shinko Kyokai Optical sensor
JPS6285476A (en) * 1985-08-30 1987-04-18 サントル・ナシヨナル・ド・ラ・ルシエルシエ・シヤンテイフイク High speed light detection by super lattice and apparatus for the same
JPS6337676A (en) * 1986-07-31 1988-02-18 Anritsu Corp Photoconductive device
JPH01140678A (en) * 1987-11-26 1989-06-01 Matsushita Electric Ind Co Ltd Photodetector
JPH0738124A (en) * 1993-07-22 1995-02-07 Nec Corp Semiconductor photodetector
JPH07231113A (en) * 1993-12-20 1995-08-29 Nec Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6333309B2 (en) 1988-07-05

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