JPS5669884A - Injection type laser - Google Patents

Injection type laser

Info

Publication number
JPS5669884A
JPS5669884A JP14574679A JP14574679A JPS5669884A JP S5669884 A JPS5669884 A JP S5669884A JP 14574679 A JP14574679 A JP 14574679A JP 14574679 A JP14574679 A JP 14574679A JP S5669884 A JPS5669884 A JP S5669884A
Authority
JP
Japan
Prior art keywords
layer
end surfaces
laser
laser resonance
infiltrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14574679A
Other languages
Japanese (ja)
Inventor
Wataru Suzaki
Hirobumi Namisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14574679A priority Critical patent/JPS5669884A/en
Publication of JPS5669884A publication Critical patent/JPS5669884A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure

Abstract

PURPOSE:To increase the output of laser rays by a method wherein a p-n junction surface is infiltrated to the large absorption coefficient side of oscillation wavelengths from the small one near laser resonance end surfaces, and high resistance layers are further formed. CONSTITUTION:AlGaAs2, GaAs3 and AlGaAs4 are stacked on GaAs1, and hetero junction surfaces 41, 42 are made up and crossed at right angles with laser resonance surfaces 11, 12. P and N type GaAs5, 6 are stacked on the layer 4. A P-N junction surface 21 (an oblique line section is a p layer) is infiltrated to the p layer near the laser resonance end surfaces 11, 12, and high resistance layers 101, 102 are further built up to the GaAs layer 3 near the end surfaces 11, 12. Thus, since carriers are hardly injected to a p layer 32 near the laser resonance end surfaces 11, 12 and an absorption coefficient is also increased, the effects of weak luminous spots can be removed, and the output of laser rays can be augmented.
JP14574679A 1979-11-09 1979-11-09 Injection type laser Pending JPS5669884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14574679A JPS5669884A (en) 1979-11-09 1979-11-09 Injection type laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14574679A JPS5669884A (en) 1979-11-09 1979-11-09 Injection type laser

Publications (1)

Publication Number Publication Date
JPS5669884A true JPS5669884A (en) 1981-06-11

Family

ID=15392184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14574679A Pending JPS5669884A (en) 1979-11-09 1979-11-09 Injection type laser

Country Status (1)

Country Link
JP (1) JPS5669884A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3232344A1 (en) * 1981-08-31 1983-03-10 Mitsubishi Denki K.K., Tokyo SEMICONDUCTOR LASER
DE3246296A1 (en) 1981-12-14 1983-07-28 Mitsubishi Denki K.K., Tokyo Injected solid-state laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3232344A1 (en) * 1981-08-31 1983-03-10 Mitsubishi Denki K.K., Tokyo SEMICONDUCTOR LASER
US4592061A (en) * 1981-08-31 1986-05-27 Mitsubishi Denki Kabushiki Kaisha Transverse junction stripe laser with steps at the end faces
DE3246296A1 (en) 1981-12-14 1983-07-28 Mitsubishi Denki K.K., Tokyo Injected solid-state laser

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