JPS6480085A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6480085A
JPS6480085A JP23484187A JP23484187A JPS6480085A JP S6480085 A JPS6480085 A JP S6480085A JP 23484187 A JP23484187 A JP 23484187A JP 23484187 A JP23484187 A JP 23484187A JP S6480085 A JPS6480085 A JP S6480085A
Authority
JP
Japan
Prior art keywords
layer
type
inaspsb
refractive index
inas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23484187A
Other languages
Japanese (ja)
Inventor
Shigeyuki Akiba
Masashi Usami
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP23484187A priority Critical patent/JPS6480085A/en
Publication of JPS6480085A publication Critical patent/JPS6480085A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To attain a low-threshold value oscillation by a method wherein the refractive index of a semiconductor layer to come into contact to at least one surface of a luminous layer is made larger than that of the luminous layer. CONSTITUTION:An N-type InAsPSb layer 2, an InAsPSb luminous layer 3 and a P-type InAsPSb layer 4 are lattice-matched with InAs and are laminated on an N-type InAs substrate 1. An N-type AlGaAsSb layer 7 and a P-type AlGaAsSb layer 8, which are lattice-matched with InAs, are each laminated on both sides of the layer 3. The Eg of the layers 7 and 8 is as large as about 0.7eV or above and is large and a refractive index larger than that of the layer 3 is shown at a region having a small composition of Al. Thereby, the high-refractive index layers 7 and 8 arranged on both sides of the layer 3 play a role to confine light in the central layer 3 and a low-threshold value oscillation is attained.
JP23484187A 1987-09-21 1987-09-21 Semiconductor laser Pending JPS6480085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23484187A JPS6480085A (en) 1987-09-21 1987-09-21 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23484187A JPS6480085A (en) 1987-09-21 1987-09-21 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6480085A true JPS6480085A (en) 1989-03-24

Family

ID=16977205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23484187A Pending JPS6480085A (en) 1987-09-21 1987-09-21 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6480085A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989213A (en) * 1989-10-30 1991-01-29 Polaroid Corporation Narrow divergence, single quantum well, separate confinement, algaas laser
US6931909B2 (en) 2001-01-11 2005-08-23 Amada Co., Ltd Punch press

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4989213A (en) * 1989-10-30 1991-01-29 Polaroid Corporation Narrow divergence, single quantum well, separate confinement, algaas laser
US6931909B2 (en) 2001-01-11 2005-08-23 Amada Co., Ltd Punch press

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