JPS6480085A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6480085A JPS6480085A JP23484187A JP23484187A JPS6480085A JP S6480085 A JPS6480085 A JP S6480085A JP 23484187 A JP23484187 A JP 23484187A JP 23484187 A JP23484187 A JP 23484187A JP S6480085 A JPS6480085 A JP S6480085A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- inaspsb
- refractive index
- inas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To attain a low-threshold value oscillation by a method wherein the refractive index of a semiconductor layer to come into contact to at least one surface of a luminous layer is made larger than that of the luminous layer. CONSTITUTION:An N-type InAsPSb layer 2, an InAsPSb luminous layer 3 and a P-type InAsPSb layer 4 are lattice-matched with InAs and are laminated on an N-type InAs substrate 1. An N-type AlGaAsSb layer 7 and a P-type AlGaAsSb layer 8, which are lattice-matched with InAs, are each laminated on both sides of the layer 3. The Eg of the layers 7 and 8 is as large as about 0.7eV or above and is large and a refractive index larger than that of the layer 3 is shown at a region having a small composition of Al. Thereby, the high-refractive index layers 7 and 8 arranged on both sides of the layer 3 play a role to confine light in the central layer 3 and a low-threshold value oscillation is attained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23484187A JPS6480085A (en) | 1987-09-21 | 1987-09-21 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23484187A JPS6480085A (en) | 1987-09-21 | 1987-09-21 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6480085A true JPS6480085A (en) | 1989-03-24 |
Family
ID=16977205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23484187A Pending JPS6480085A (en) | 1987-09-21 | 1987-09-21 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6480085A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4989213A (en) * | 1989-10-30 | 1991-01-29 | Polaroid Corporation | Narrow divergence, single quantum well, separate confinement, algaas laser |
US6931909B2 (en) | 2001-01-11 | 2005-08-23 | Amada Co., Ltd | Punch press |
-
1987
- 1987-09-21 JP JP23484187A patent/JPS6480085A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4989213A (en) * | 1989-10-30 | 1991-01-29 | Polaroid Corporation | Narrow divergence, single quantum well, separate confinement, algaas laser |
US6931909B2 (en) | 2001-01-11 | 2005-08-23 | Amada Co., Ltd | Punch press |
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