JPS6455542A - Laminated semiconductor structure - Google Patents
Laminated semiconductor structureInfo
- Publication number
- JPS6455542A JPS6455542A JP62213902A JP21390287A JPS6455542A JP S6455542 A JPS6455542 A JP S6455542A JP 62213902 A JP62213902 A JP 62213902A JP 21390287 A JP21390287 A JP 21390287A JP S6455542 A JPS6455542 A JP S6455542A
- Authority
- JP
- Japan
- Prior art keywords
- laminated
- layers
- alternately
- semiconductor
- semiconductor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To provide a laminated semiconductor structure which is steep in the rising of a light absorption end and is easy to produce by alternately laminating 1st and 2nd semiconductor layers and alternately laminating impurities of n-type and p-type in contact with the 1st semiconductor layers. CONSTITUTION:A buffer layer 102 and a clad layer 103 are laminated on a semi-insulating GaAs substrate 101 as the laminated semiconductors utilizing a nonlinear effect. 80Angstrom GaAs quantum well layers 104 and 80Angstrom Al0.3Ga0.7As barrier layers 105 are alternately laminated thereon and the barrier layers 105 in contact with the quantum well layers 104 are laminated to 30 periods so as to form Si or Be alternately. The semiconductor element which is steep in the rising of the absorption end and permits easy production of the waveguide type element, more particularly the laminated semiconductor structure of elements for optical logical circuits, etc., are thus obtd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213902A JPS6455542A (en) | 1987-08-26 | 1987-08-26 | Laminated semiconductor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62213902A JPS6455542A (en) | 1987-08-26 | 1987-08-26 | Laminated semiconductor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6455542A true JPS6455542A (en) | 1989-03-02 |
| JPH0531129B2 JPH0531129B2 (en) | 1993-05-11 |
Family
ID=16646914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62213902A Granted JPS6455542A (en) | 1987-08-26 | 1987-08-26 | Laminated semiconductor structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6455542A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997048137A1 (en) * | 1996-06-13 | 1997-12-18 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
| JP2019125645A (en) * | 2018-01-15 | 2019-07-25 | 富士通株式会社 | Infrared detector, imaging element, imaging system, and method of manufacturing infrared detector |
-
1987
- 1987-08-26 JP JP62213902A patent/JPS6455542A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997048137A1 (en) * | 1996-06-13 | 1997-12-18 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
| US6177710B1 (en) | 1996-06-13 | 2001-01-23 | The Furukawa Electric Co., Ltd. | Semiconductor waveguide type photodetector and method for manufacturing the same |
| JP2019125645A (en) * | 2018-01-15 | 2019-07-25 | 富士通株式会社 | Infrared detector, imaging element, imaging system, and method of manufacturing infrared detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0531129B2 (en) | 1993-05-11 |
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