JPS57181178A - Element for light emission and detection - Google Patents
Element for light emission and detectionInfo
- Publication number
- JPS57181178A JPS57181178A JP6631981A JP6631981A JPS57181178A JP S57181178 A JPS57181178 A JP S57181178A JP 6631981 A JP6631981 A JP 6631981A JP 6631981 A JP6631981 A JP 6631981A JP S57181178 A JPS57181178 A JP S57181178A
- Authority
- JP
- Japan
- Prior art keywords
- light emission
- light
- type
- optical fiber
- energy gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title abstract 4
- 239000013307 optical fiber Substances 0.000 abstract 3
- 230000005540 biological transmission Effects 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
Landscapes
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enhance sensibility for bi-directional light transmission by a single optical fiber, by providing diffused layers with different depths in a compound semiconductor layer having composition slope to reduce the energy gap of a light detection part less than that of a light emission part. CONSTITUTION:An N type GaAsP layer 2 on a N type GaAs substrate 1 has continuously varying composition slope. A P type layer 8 is formed thereon by Zn diffusion for the light emission part and P type layer 7 for the light detection part in the same way. The light detection part has an energy gap smaller than that of the light emission part. The impression of negative voltage on an N type electrode 8 causes light emission having the center in wave length corresponding to the energy gap with light transmitted through the core part 12 of an optical fiber 13. On the other hand, a P side electrode 7 formed in negative serves as an LED. Thus, sensibility is enhanced with bi-directional transmission available by a single optical fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6631981A JPS57181178A (en) | 1981-04-30 | 1981-04-30 | Element for light emission and detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6631981A JPS57181178A (en) | 1981-04-30 | 1981-04-30 | Element for light emission and detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57181178A true JPS57181178A (en) | 1982-11-08 |
Family
ID=13312387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6631981A Pending JPS57181178A (en) | 1981-04-30 | 1981-04-30 | Element for light emission and detection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57181178A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237978A (en) * | 1985-08-12 | 1987-02-18 | Matsushita Electric Ind Co Ltd | Light emitting and receiving integrated element |
-
1981
- 1981-04-30 JP JP6631981A patent/JPS57181178A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237978A (en) * | 1985-08-12 | 1987-02-18 | Matsushita Electric Ind Co Ltd | Light emitting and receiving integrated element |
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