JPS5789289A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5789289A JPS5789289A JP16623580A JP16623580A JPS5789289A JP S5789289 A JPS5789289 A JP S5789289A JP 16623580 A JP16623580 A JP 16623580A JP 16623580 A JP16623580 A JP 16623580A JP S5789289 A JPS5789289 A JP S5789289A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- conductor layer
- stripe shaped
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To facilitate effective control of photo output by forming light emitting element and light receiving element closely separated by a stripe shaped groove on a common substrate. CONSTITUTION:The first conductor layer 2, the second conductor layer 3, the third conductor layer 4 and the fourth conductor layer 5 are consecutively formed on an n type GaAs substrate. P type electrodes 8, 9 are formed each separated by a stripe shaped groove 10 on the fourth conductor layer. A stripe shaped Zn diffused layer 6 is formed in a part of the layer 5 and the layer 4 on the electrode 8 side, and a stripe shaped Zn diffused layer 7 is formed in the layer 5 on the side of an electrode 9. In this constitution the electrode 8 side becomes a light emitter and the electrode 9 a light receiver. Thereby a single element effectively controls photo output power.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16623580A JPS5789289A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16623580A JPS5789289A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5789289A true JPS5789289A (en) | 1982-06-03 |
JPS6342870B2 JPS6342870B2 (en) | 1988-08-25 |
Family
ID=15827611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16623580A Granted JPS5789289A (en) | 1980-11-25 | 1980-11-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789289A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62150895A (en) * | 1985-12-25 | 1987-07-04 | Kokusai Denshin Denwa Co Ltd <Kdd> | Distributed feedback type semiconductor laser with monitor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5214393A (en) * | 1975-07-16 | 1977-02-03 | Post Office | Laser and optical detector |
JPS56150888A (en) * | 1980-04-23 | 1981-11-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
-
1980
- 1980-11-25 JP JP16623580A patent/JPS5789289A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5214393A (en) * | 1975-07-16 | 1977-02-03 | Post Office | Laser and optical detector |
JPS56150888A (en) * | 1980-04-23 | 1981-11-21 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62150895A (en) * | 1985-12-25 | 1987-07-04 | Kokusai Denshin Denwa Co Ltd <Kdd> | Distributed feedback type semiconductor laser with monitor |
Also Published As
Publication number | Publication date |
---|---|
JPS6342870B2 (en) | 1988-08-25 |
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