JPS5789289A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5789289A
JPS5789289A JP16623580A JP16623580A JPS5789289A JP S5789289 A JPS5789289 A JP S5789289A JP 16623580 A JP16623580 A JP 16623580A JP 16623580 A JP16623580 A JP 16623580A JP S5789289 A JPS5789289 A JP S5789289A
Authority
JP
Japan
Prior art keywords
layer
electrode
conductor layer
stripe shaped
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16623580A
Other languages
Japanese (ja)
Other versions
JPS6342870B2 (en
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16623580A priority Critical patent/JPS5789289A/en
Publication of JPS5789289A publication Critical patent/JPS5789289A/en
Publication of JPS6342870B2 publication Critical patent/JPS6342870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate effective control of photo output by forming light emitting element and light receiving element closely separated by a stripe shaped groove on a common substrate. CONSTITUTION:The first conductor layer 2, the second conductor layer 3, the third conductor layer 4 and the fourth conductor layer 5 are consecutively formed on an n type GaAs substrate. P type electrodes 8, 9 are formed each separated by a stripe shaped groove 10 on the fourth conductor layer. A stripe shaped Zn diffused layer 6 is formed in a part of the layer 5 and the layer 4 on the electrode 8 side, and a stripe shaped Zn diffused layer 7 is formed in the layer 5 on the side of an electrode 9. In this constitution the electrode 8 side becomes a light emitter and the electrode 9 a light receiver. Thereby a single element effectively controls photo output power.
JP16623580A 1980-11-25 1980-11-25 Semiconductor device Granted JPS5789289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16623580A JPS5789289A (en) 1980-11-25 1980-11-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16623580A JPS5789289A (en) 1980-11-25 1980-11-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5789289A true JPS5789289A (en) 1982-06-03
JPS6342870B2 JPS6342870B2 (en) 1988-08-25

Family

ID=15827611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16623580A Granted JPS5789289A (en) 1980-11-25 1980-11-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5789289A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150895A (en) * 1985-12-25 1987-07-04 Kokusai Denshin Denwa Co Ltd <Kdd> Distributed feedback type semiconductor laser with monitor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214393A (en) * 1975-07-16 1977-02-03 Post Office Laser and optical detector
JPS56150888A (en) * 1980-04-23 1981-11-21 Matsushita Electric Ind Co Ltd Semiconductor laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214393A (en) * 1975-07-16 1977-02-03 Post Office Laser and optical detector
JPS56150888A (en) * 1980-04-23 1981-11-21 Matsushita Electric Ind Co Ltd Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150895A (en) * 1985-12-25 1987-07-04 Kokusai Denshin Denwa Co Ltd <Kdd> Distributed feedback type semiconductor laser with monitor

Also Published As

Publication number Publication date
JPS6342870B2 (en) 1988-08-25

Similar Documents

Publication Publication Date Title
JPS5796583A (en) Semiconductor laser with plurality of light source
JPS5789289A (en) Semiconductor device
JPS5598880A (en) Light transmitting/receiving semiconductor device
JPS5779685A (en) Light emitting diode device
JPS574180A (en) Light-emitting element in gallium nitride
JPS5418691A (en) Manufacture of pn-junction type light emitting diode
JPS577984A (en) Semiconductor light emitting device
JPS56152289A (en) Stripe type semiconductor laser with gate electrode
JPS5329685A (en) Photo semiconductor device
JPS5591892A (en) Semiconductor laser light emission device
JPS56134792A (en) Semiconductor laser device
JPS5779683A (en) Narrow spectrum type light emitting diode
JPS647681A (en) Distributed reflex semiconductor laser
JPS5799792A (en) Semiconductor laser device
JPS57181178A (en) Element for light emission and detection
JPS55123182A (en) Light emitting diode
JPS57198685A (en) Semiconductor light emitting element
JPS5742180A (en) Light emitting diode
JPS5727095A (en) Semiconductor light emitting device
JPS5791581A (en) Semiconductor laser element and manufacture therefor
JPS575377A (en) Photoelectric converter
JPS5782712A (en) Voltage value display element
JPS5679477A (en) Photoelectric conversion device
JPS5756980A (en) Light emitting element
JPS57145389A (en) Semiconductor laser device