JPS56150888A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS56150888A JPS56150888A JP5451680A JP5451680A JPS56150888A JP S56150888 A JPS56150888 A JP S56150888A JP 5451680 A JP5451680 A JP 5451680A JP 5451680 A JP5451680 A JP 5451680A JP S56150888 A JPS56150888 A JP S56150888A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- induction
- junction
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 abstract 6
- 230000006698 induction Effects 0.000 abstract 4
- 230000010355 oscillation Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enable the detection of the output of a semiconductor laser device while induction radiating from a region of the device and to simply and sensitively detect the variation of the oscillation output of the device by forming a P-N junction for detecting the induction radiation output in the vicinity of the region for induction radiating. CONSTITUTION:A P-N junction semiconductor crystalline substrate 11 bonded in the removed state to form a strip-shaped recess groove at B part is formed at a P type semiconductor crystalline substrate 22 on an N type semiconductor crystalline substrate 21, the first clad layer 23, an active layer 24, the second clad layer 25 and an insulator thin film 26 are sequentially formed over the recess groove on a part of the substrate 11, and ohmic electrodes and hence the third electrode 28, the second electrode 29 and the first electrode 27 are sequentially formed respectively on the substrate 21, 22 and the second clad layer 25. When a suitable voltage is applied between the electrodes 27 and 28, an induction radiation (laser oscillation) occurs, and a laser spot 10 can be observed. When a voltage is so applied between the electrodes 29 and 28 as to apply a reverse bias to the junction 12 of the substrate 11, the laser light can be detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5451680A JPS56150888A (en) | 1980-04-23 | 1980-04-23 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5451680A JPS56150888A (en) | 1980-04-23 | 1980-04-23 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56150888A true JPS56150888A (en) | 1981-11-21 |
| JPS6211796B2 JPS6211796B2 (en) | 1987-03-14 |
Family
ID=12972806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5451680A Granted JPS56150888A (en) | 1980-04-23 | 1980-04-23 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56150888A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789289A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor device |
| JPS594192A (en) * | 1982-06-30 | 1984-01-10 | Sharp Corp | Semiconductor laser device |
| JPS60198885A (en) * | 1984-03-23 | 1985-10-08 | Toshiba Corp | Integrated semiconductor laser |
| JPS6218079A (en) * | 1985-07-17 | 1987-01-27 | Matsushita Electric Ind Co Ltd | Optical integrated circuit device |
| EP0449636A2 (en) * | 1990-03-28 | 1991-10-02 | Xerox Corporation | Laser apparatus with means for detecting the laser power level |
| US5252513A (en) * | 1990-03-28 | 1993-10-12 | Xerox Corporation | Method for forming a laser and light detector on a semiconductor substrate |
| CN107132866A (en) * | 2016-02-26 | 2017-09-05 | 捷温有限责任公司 | Temperature equipment and the inspection functional method of sensor device |
-
1980
- 1980-04-23 JP JP5451680A patent/JPS56150888A/en active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789289A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor device |
| JPS6342870B2 (en) * | 1980-11-25 | 1988-08-25 | Sharp Kk | |
| JPS594192A (en) * | 1982-06-30 | 1984-01-10 | Sharp Corp | Semiconductor laser device |
| JPS60198885A (en) * | 1984-03-23 | 1985-10-08 | Toshiba Corp | Integrated semiconductor laser |
| JPS6218079A (en) * | 1985-07-17 | 1987-01-27 | Matsushita Electric Ind Co Ltd | Optical integrated circuit device |
| EP0449636A2 (en) * | 1990-03-28 | 1991-10-02 | Xerox Corporation | Laser apparatus with means for detecting the laser power level |
| US5252513A (en) * | 1990-03-28 | 1993-10-12 | Xerox Corporation | Method for forming a laser and light detector on a semiconductor substrate |
| CN107132866A (en) * | 2016-02-26 | 2017-09-05 | 捷温有限责任公司 | Temperature equipment and the inspection functional method of sensor device |
| CN107132866B (en) * | 2016-02-26 | 2019-04-05 | 捷温有限责任公司 | Temperature equipment and the inspection functional method of sensor device |
| US10605497B2 (en) | 2016-02-26 | 2020-03-31 | Gentherm Gmbh | Device for regulating the temperature of at least one object and method for checking the functional capability of a sensor device having at least two sensors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211796B2 (en) | 1987-03-14 |
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