JPS56107585A - Semiconductor diode device - Google Patents
Semiconductor diode deviceInfo
- Publication number
- JPS56107585A JPS56107585A JP979580A JP979580A JPS56107585A JP S56107585 A JPS56107585 A JP S56107585A JP 979580 A JP979580 A JP 979580A JP 979580 A JP979580 A JP 979580A JP S56107585 A JPS56107585 A JP S56107585A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- layer
- main surface
- substrate
- semiconductor diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To minimize surface leakage current and thus to minimize counter current by a method wherein an electrode layer is formed on the main surface of a substrate through an insulating layer, which works on electric field. CONSTITUTION:An N type domain 3 is provided from the main surface of a P type semiconductor substrate 1 to form a P-N junction 4, or a metallic layer is provided to form a Schottky junction. Next, electrodes 7, 9 are formed, and then an electrode layer 20 is formed on a main surface 2 through an insulating film 5 of SiO2. By giving a negative bias voltage to the electrode layer 20 of the semiconductor diode to work on electric field, a carrier in a domain including a depletion layer 12 under the electrode layer is pushed out into the substrate 1. A surface leakage current is minimized thereby and a counter current is thus minimized consequently.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP979580A JPS56107585A (en) | 1980-01-30 | 1980-01-30 | Semiconductor diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP979580A JPS56107585A (en) | 1980-01-30 | 1980-01-30 | Semiconductor diode device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56107585A true JPS56107585A (en) | 1981-08-26 |
Family
ID=11730132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP979580A Pending JPS56107585A (en) | 1980-01-30 | 1980-01-30 | Semiconductor diode device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56107585A (en) |
-
1980
- 1980-01-30 JP JP979580A patent/JPS56107585A/en active Pending
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