JPS556841A - Planar type semiconductor device - Google Patents

Planar type semiconductor device

Info

Publication number
JPS556841A
JPS556841A JP7897778A JP7897778A JPS556841A JP S556841 A JPS556841 A JP S556841A JP 7897778 A JP7897778 A JP 7897778A JP 7897778 A JP7897778 A JP 7897778A JP S556841 A JPS556841 A JP S556841A
Authority
JP
Japan
Prior art keywords
junction
blocking
semiconductor device
type semiconductor
planar type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7897778A
Other languages
Japanese (ja)
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7897778A priority Critical patent/JPS556841A/en
Publication of JPS556841A publication Critical patent/JPS556841A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To accomplish high voltage proofing of blocking PN junction through forced-stretch of a part of junction depletion layer at the state of PN blocking. CONSTITUTION:A part of the junction depletion layer is forced-strentched by a field plate method, a field limiting method, a cardling method, a method utilizing surface charge generated by chemical treatment, or an ion injection method when one or more blocking PN junction is at the state of blocking in a planar type semiconductor device in which the surface of the PN junction is coated with an insulated film or semi-insulated film including SiO2.
JP7897778A 1978-06-28 1978-06-28 Planar type semiconductor device Pending JPS556841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7897778A JPS556841A (en) 1978-06-28 1978-06-28 Planar type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7897778A JPS556841A (en) 1978-06-28 1978-06-28 Planar type semiconductor device

Publications (1)

Publication Number Publication Date
JPS556841A true JPS556841A (en) 1980-01-18

Family

ID=13676946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7897778A Pending JPS556841A (en) 1978-06-28 1978-06-28 Planar type semiconductor device

Country Status (1)

Country Link
JP (1) JPS556841A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210671A (en) * 1982-06-01 1983-12-07 Nec Corp Semiconductor device
JPS62160310U (en) * 1986-03-31 1987-10-12
JPH03108765A (en) * 1989-09-22 1991-05-08 Sharp Corp Commutation element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210671A (en) * 1982-06-01 1983-12-07 Nec Corp Semiconductor device
JPH0420258B2 (en) * 1982-06-01 1992-04-02 Nippon Electric Co
JPS62160310U (en) * 1986-03-31 1987-10-12
JPH03108765A (en) * 1989-09-22 1991-05-08 Sharp Corp Commutation element

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