JPS556841A - Planar type semiconductor device - Google Patents
Planar type semiconductor deviceInfo
- Publication number
- JPS556841A JPS556841A JP7897778A JP7897778A JPS556841A JP S556841 A JPS556841 A JP S556841A JP 7897778 A JP7897778 A JP 7897778A JP 7897778 A JP7897778 A JP 7897778A JP S556841 A JPS556841 A JP S556841A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- blocking
- semiconductor device
- type semiconductor
- planar type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 5
- 230000000903 blocking effect Effects 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To accomplish high voltage proofing of blocking PN junction through forced-stretch of a part of junction depletion layer at the state of PN blocking. CONSTITUTION:A part of the junction depletion layer is forced-strentched by a field plate method, a field limiting method, a cardling method, a method utilizing surface charge generated by chemical treatment, or an ion injection method when one or more blocking PN junction is at the state of blocking in a planar type semiconductor device in which the surface of the PN junction is coated with an insulated film or semi-insulated film including SiO2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7897778A JPS556841A (en) | 1978-06-28 | 1978-06-28 | Planar type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7897778A JPS556841A (en) | 1978-06-28 | 1978-06-28 | Planar type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS556841A true JPS556841A (en) | 1980-01-18 |
Family
ID=13676946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7897778A Pending JPS556841A (en) | 1978-06-28 | 1978-06-28 | Planar type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS556841A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210671A (en) * | 1982-06-01 | 1983-12-07 | Nec Corp | Semiconductor device |
JPS62160310U (en) * | 1986-03-31 | 1987-10-12 | ||
JPH03108765A (en) * | 1989-09-22 | 1991-05-08 | Sharp Corp | Commutation element |
-
1978
- 1978-06-28 JP JP7897778A patent/JPS556841A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58210671A (en) * | 1982-06-01 | 1983-12-07 | Nec Corp | Semiconductor device |
JPH0420258B2 (en) * | 1982-06-01 | 1992-04-02 | Nippon Electric Co | |
JPS62160310U (en) * | 1986-03-31 | 1987-10-12 | ||
JPH03108765A (en) * | 1989-09-22 | 1991-05-08 | Sharp Corp | Commutation element |
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