JPS57198685A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS57198685A
JPS57198685A JP8401581A JP8401581A JPS57198685A JP S57198685 A JPS57198685 A JP S57198685A JP 8401581 A JP8401581 A JP 8401581A JP 8401581 A JP8401581 A JP 8401581A JP S57198685 A JPS57198685 A JP S57198685A
Authority
JP
Japan
Prior art keywords
layer
region
substrate
light emitting
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8401581A
Other languages
Japanese (ja)
Inventor
Katsuto Shima
Kiyoshi Hanamitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8401581A priority Critical patent/JPS57198685A/en
Publication of JPS57198685A publication Critical patent/JPS57198685A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a lateral oscillating mode having high light emitting efficiency, by providing a protruded part at the central part of a semi-insulating substrate constituting the light emitting element, making only the part of a clad layer which is layered on said protruded part thin, and diffusing and forming a reverse conductive region, which evades the protruded part and enters the substrate, in the part of the layered body. CONSTITUTION:On the semi-insulating GaAs substrate 101, an N type GaAlAs clad layer 102, an N type GaAlAs active layer 103, an N type GaAlAs clad layer 104, and N<+> type GaAs layer 105 are layered and formed. The layer 105 is etched, and a void region is formed in the approximately central part of the layer 105. Then Zn is diffused from the void region along one side of the layered body so as to enter the substrate 101, and a P type region 106 is generated. At the central part of the surface of the substrate 101 in this constitution, a stripe shaped protruded part 101A is provided with an interval W being provided from the edge of the region 106. Only the region of the layer 102 on the part 101A is made thin. An N side electrode 107 is deposited on the remaining layer 105, and a P side electrode 108 is deposited on the region 106.
JP8401581A 1981-06-01 1981-06-01 Semiconductor light emitting element Pending JPS57198685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8401581A JPS57198685A (en) 1981-06-01 1981-06-01 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8401581A JPS57198685A (en) 1981-06-01 1981-06-01 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS57198685A true JPS57198685A (en) 1982-12-06

Family

ID=13818742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8401581A Pending JPS57198685A (en) 1981-06-01 1981-06-01 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS57198685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805179A (en) * 1986-09-23 1989-02-14 International Business Machines Corporation Transverse junction stripe laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4805179A (en) * 1986-09-23 1989-02-14 International Business Machines Corporation Transverse junction stripe laser

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