JPS57143880A - Semiconductor light emitting element and its manufacture - Google Patents

Semiconductor light emitting element and its manufacture

Info

Publication number
JPS57143880A
JPS57143880A JP2971681A JP2971681A JPS57143880A JP S57143880 A JPS57143880 A JP S57143880A JP 2971681 A JP2971681 A JP 2971681A JP 2971681 A JP2971681 A JP 2971681A JP S57143880 A JPS57143880 A JP S57143880A
Authority
JP
Japan
Prior art keywords
light emitting
layer
optical fiber
optical
emitting section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2971681A
Other languages
Japanese (ja)
Inventor
Osamu Wada
Yasuo Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2971681A priority Critical patent/JPS57143880A/en
Publication of JPS57143880A publication Critical patent/JPS57143880A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reflect most of an optical output component being along a light emitting surface to the end surface of an optical fiber by forming a light emitting section in mesa structure, convexly shaping the side surface toward the outside of the light emitting section and coating the side surface with a metal having high optical reflectivity through an insulating film. CONSTITUTION:An N InP layer 16' is formed to an N InP substrate 16, an N In1-xGaxAs1-yPy layer 16'', an N InP layer 16''' and P<+> In1-xGaxAs1-yPy layer 16<+4> are convexly shaped successively toward the outside of the light emitting section, and the electrode 20 of AuZn is formed. The electrodes 19 of AuGeNi are formed at the reverse side of the electrode 20, and the side surface with mesa type structure is coated with the metal having high optical reflectivity through the insulating film. Accordingly, the optical output component which has not been coupled with the optical fiber can be combined with the optical fiber, and a light emitting diode having large light emitting output is obtained.
JP2971681A 1981-03-02 1981-03-02 Semiconductor light emitting element and its manufacture Pending JPS57143880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2971681A JPS57143880A (en) 1981-03-02 1981-03-02 Semiconductor light emitting element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2971681A JPS57143880A (en) 1981-03-02 1981-03-02 Semiconductor light emitting element and its manufacture

Publications (1)

Publication Number Publication Date
JPS57143880A true JPS57143880A (en) 1982-09-06

Family

ID=12283828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2971681A Pending JPS57143880A (en) 1981-03-02 1981-03-02 Semiconductor light emitting element and its manufacture

Country Status (1)

Country Link
JP (1) JPS57143880A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625674A (en) * 1985-07-01 1987-01-12 Nec Corp Semiconductor light emitting diode
JPS62155574A (en) * 1985-12-24 1987-07-10 Nec Corp Light emitting diode
JPH01228181A (en) * 1988-03-08 1989-09-12 Furukawa Electric Co Ltd:The Semiconductor light emitting element
JPH05136460A (en) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd Formation of microlens
US7221001B2 (en) 2000-07-18 2007-05-22 Sony Corporation Semiconductor light-emitting device and process for producing the same
JP2009533883A (en) * 2006-04-21 2009-09-17 ウエイブニクス インク． High efficiency light emitting diode having multilayer reflector structure and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625674A (en) * 1985-07-01 1987-01-12 Nec Corp Semiconductor light emitting diode
JPS62155574A (en) * 1985-12-24 1987-07-10 Nec Corp Light emitting diode
JPH01228181A (en) * 1988-03-08 1989-09-12 Furukawa Electric Co Ltd:The Semiconductor light emitting element
JPH05136460A (en) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd Formation of microlens
US7221001B2 (en) 2000-07-18 2007-05-22 Sony Corporation Semiconductor light-emitting device and process for producing the same
JP2009533883A (en) * 2006-04-21 2009-09-17 ウエイブニクス インク． High efficiency light emitting diode having multilayer reflector structure and manufacturing method thereof

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