JPS5775473A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting elementInfo
- Publication number
- JPS5775473A JPS5775473A JP15180380A JP15180380A JPS5775473A JP S5775473 A JPS5775473 A JP S5775473A JP 15180380 A JP15180380 A JP 15180380A JP 15180380 A JP15180380 A JP 15180380A JP S5775473 A JPS5775473 A JP S5775473A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- type
- emitting surface
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To expand an operating region and to increase light emission efficiency as well by a method wherein the refractive index of a dielectric layer provided at a light emitting surface and that of a light emitting element are satisfied with specific conditions. CONSTITUTION:An N type layer 2, N type active layer 3, P type layer 4, and N type layer 5 are consecutively grown on an N type substrate 1. Next, a striped P type impurity diffusion region 6 is formed to compose andle theta to the normal direction of a light emitting surface and an SiO2 film 7 is formed on the region 6. Furthermore, a P electrode 8 and an N electrode 9 are made to form a dielectric layer 10 on the light emitting surface. In this composition, application of forward voltage to the electrodes 8, 9 guides light emitted at the layer 3 to the outside by interposing the light between the layers 2 and 4. In this case, the refrective index of the layer 10 and that of the light emitting region are difined as n1 and n2 respectively and are adjusted to satisfy the following formulaeI, II. In this way, the light emitted in the light emitting diode can be taken out toward the outside with few reflection at the light emitting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15180380A JPS5775473A (en) | 1980-10-29 | 1980-10-29 | Semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15180380A JPS5775473A (en) | 1980-10-29 | 1980-10-29 | Semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5775473A true JPS5775473A (en) | 1982-05-12 |
Family
ID=15526636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15180380A Pending JPS5775473A (en) | 1980-10-29 | 1980-10-29 | Semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5775473A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5869848A (en) * | 1995-12-14 | 1999-02-09 | Oki Electric Industry Co., Ltd. | End face light-emitting-type LED, end face light-emitting-type LED array and methods of manufacturing them |
-
1980
- 1980-10-29 JP JP15180380A patent/JPS5775473A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5869848A (en) * | 1995-12-14 | 1999-02-09 | Oki Electric Industry Co., Ltd. | End face light-emitting-type LED, end face light-emitting-type LED array and methods of manufacturing them |
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