JPS5793588A - Light emitting element - Google Patents

Light emitting element

Info

Publication number
JPS5793588A
JPS5793588A JP17008680A JP17008680A JPS5793588A JP S5793588 A JPS5793588 A JP S5793588A JP 17008680 A JP17008680 A JP 17008680A JP 17008680 A JP17008680 A JP 17008680A JP S5793588 A JPS5793588 A JP S5793588A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
dielectric layer
current injection
emitting surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17008680A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17008680A priority Critical patent/JPS5793588A/en
Publication of JPS5793588A publication Critical patent/JPS5793588A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a light emitting element having preferable light emitting efficiency by limiting a plurality of current injection regions for the normal line of the light emitting surface to form a specific angle determined by the refractive indexes of a dielectric layer and a semiconductor light emitting element formed on the light emitting surface. CONSTITUTION:When the refractive inex of dielectric layer 10 formed on a light emitting surface is represented by n1 and the refractive index of a semiconductor light emitting element is represented by n2, an angle theta can be obtained by the formula theta tan<-1>(n1/n2). A plurality of current injection regions are limited to the normal direction of the light emitting surface. A metallic layer 11 is disposed except the current injection region on the layer 10, a dielectric layer 12 of refractive index n3 is then disposed on the layers 10, 11, and an inequality of n3>=n1 can be obtained. Thus an end face light emitting type semiconductor light emitting element capable of obtaining large light power with high light emitting efficiency can be formed.
JP17008680A 1980-12-02 1980-12-02 Light emitting element Pending JPS5793588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17008680A JPS5793588A (en) 1980-12-02 1980-12-02 Light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17008680A JPS5793588A (en) 1980-12-02 1980-12-02 Light emitting element

Publications (1)

Publication Number Publication Date
JPS5793588A true JPS5793588A (en) 1982-06-10

Family

ID=15898379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17008680A Pending JPS5793588A (en) 1980-12-02 1980-12-02 Light emitting element

Country Status (1)

Country Link
JP (1) JPS5793588A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62197871U (en) * 1986-06-06 1987-12-16
US4747109A (en) * 1985-07-12 1988-05-24 Sharp Kabushiki Kaisha Semiconductor laser array device
JPH01117073A (en) * 1987-10-29 1989-05-09 Mitsubishi Electric Corp Edge emission type led

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747109A (en) * 1985-07-12 1988-05-24 Sharp Kabushiki Kaisha Semiconductor laser array device
JPS62197871U (en) * 1986-06-06 1987-12-16
JPH01117073A (en) * 1987-10-29 1989-05-09 Mitsubishi Electric Corp Edge emission type led

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