JPS6428972A - Manufacture of edge light-emitting diode - Google Patents

Manufacture of edge light-emitting diode

Info

Publication number
JPS6428972A
JPS6428972A JP18601387A JP18601387A JPS6428972A JP S6428972 A JPS6428972 A JP S6428972A JP 18601387 A JP18601387 A JP 18601387A JP 18601387 A JP18601387 A JP 18601387A JP S6428972 A JPS6428972 A JP S6428972A
Authority
JP
Japan
Prior art keywords
film
refractive index
manufacture
sinx
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18601387A
Other languages
Japanese (ja)
Inventor
Yoichi Isoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18601387A priority Critical patent/JPS6428972A/en
Publication of JPS6428972A publication Critical patent/JPS6428972A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To manufacture an ELED with a good yield in manhours fewer than that by a conventional method, by employing an RIE method and sticking an insulation film appropriate in its refractive index and thickness on a light drawing surface. CONSTITUTION:Projecting structure is formed as shown in a figure by performing an inclined RIE method in the direction of an angle (theta) with a surface of a substrate. An SiN film is stuck to form an insulation film 8 by a plasma CVD method so that this film is easily stuck on an end plane. Afterwards a photoresist is used as a mask to open this film by the use of hydrofluoric acid. A refractive index of SiNx can be varied according to forming conditions. Assuming that the refractive index n0 of an InP film (and an InGaAsP film) is - 3.4 and its wavelength lambda is -1.3mum, the refractive index (n1) and thickness (d1) of the SiNx film is made appropriate in the following equation: n1<2>-n0, d1-1.84. Hence, n1-1.84 and d1-0.18mum are obtained.
JP18601387A 1987-07-24 1987-07-24 Manufacture of edge light-emitting diode Pending JPS6428972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18601387A JPS6428972A (en) 1987-07-24 1987-07-24 Manufacture of edge light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18601387A JPS6428972A (en) 1987-07-24 1987-07-24 Manufacture of edge light-emitting diode

Publications (1)

Publication Number Publication Date
JPS6428972A true JPS6428972A (en) 1989-01-31

Family

ID=16180854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18601387A Pending JPS6428972A (en) 1987-07-24 1987-07-24 Manufacture of edge light-emitting diode

Country Status (1)

Country Link
JP (1) JPS6428972A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219796A (en) * 1991-11-04 1993-06-15 Xerox Corporation Method of fabricating image sensor dies and the like for use in assembling arrays
JPH06216408A (en) * 1993-01-14 1994-08-05 Kokusai Denshin Denwa Co Ltd <Kdd> Glass light-emitting device
JPH08162525A (en) * 1994-10-04 1996-06-21 Nec Corp Manufacture of semiconductor device, and the semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219796A (en) * 1991-11-04 1993-06-15 Xerox Corporation Method of fabricating image sensor dies and the like for use in assembling arrays
JPH06216408A (en) * 1993-01-14 1994-08-05 Kokusai Denshin Denwa Co Ltd <Kdd> Glass light-emitting device
JPH08162525A (en) * 1994-10-04 1996-06-21 Nec Corp Manufacture of semiconductor device, and the semiconductor device

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