JPS6428972A - Manufacture of edge light-emitting diode - Google Patents
Manufacture of edge light-emitting diodeInfo
- Publication number
- JPS6428972A JPS6428972A JP18601387A JP18601387A JPS6428972A JP S6428972 A JPS6428972 A JP S6428972A JP 18601387 A JP18601387 A JP 18601387A JP 18601387 A JP18601387 A JP 18601387A JP S6428972 A JPS6428972 A JP S6428972A
- Authority
- JP
- Japan
- Prior art keywords
- film
- refractive index
- manufacture
- sinx
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To manufacture an ELED with a good yield in manhours fewer than that by a conventional method, by employing an RIE method and sticking an insulation film appropriate in its refractive index and thickness on a light drawing surface. CONSTITUTION:Projecting structure is formed as shown in a figure by performing an inclined RIE method in the direction of an angle (theta) with a surface of a substrate. An SiN film is stuck to form an insulation film 8 by a plasma CVD method so that this film is easily stuck on an end plane. Afterwards a photoresist is used as a mask to open this film by the use of hydrofluoric acid. A refractive index of SiNx can be varied according to forming conditions. Assuming that the refractive index n0 of an InP film (and an InGaAsP film) is - 3.4 and its wavelength lambda is -1.3mum, the refractive index (n1) and thickness (d1) of the SiNx film is made appropriate in the following equation: n1<2>-n0, d1-1.84. Hence, n1-1.84 and d1-0.18mum are obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18601387A JPS6428972A (en) | 1987-07-24 | 1987-07-24 | Manufacture of edge light-emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18601387A JPS6428972A (en) | 1987-07-24 | 1987-07-24 | Manufacture of edge light-emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6428972A true JPS6428972A (en) | 1989-01-31 |
Family
ID=16180854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18601387A Pending JPS6428972A (en) | 1987-07-24 | 1987-07-24 | Manufacture of edge light-emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6428972A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219796A (en) * | 1991-11-04 | 1993-06-15 | Xerox Corporation | Method of fabricating image sensor dies and the like for use in assembling arrays |
JPH06216408A (en) * | 1993-01-14 | 1994-08-05 | Kokusai Denshin Denwa Co Ltd <Kdd> | Glass light-emitting device |
JPH08162525A (en) * | 1994-10-04 | 1996-06-21 | Nec Corp | Manufacture of semiconductor device, and the semiconductor device |
-
1987
- 1987-07-24 JP JP18601387A patent/JPS6428972A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5219796A (en) * | 1991-11-04 | 1993-06-15 | Xerox Corporation | Method of fabricating image sensor dies and the like for use in assembling arrays |
JPH06216408A (en) * | 1993-01-14 | 1994-08-05 | Kokusai Denshin Denwa Co Ltd <Kdd> | Glass light-emitting device |
JPH08162525A (en) * | 1994-10-04 | 1996-06-21 | Nec Corp | Manufacture of semiconductor device, and the semiconductor device |
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