JPS55110082A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS55110082A
JPS55110082A JP1813179A JP1813179A JPS55110082A JP S55110082 A JPS55110082 A JP S55110082A JP 1813179 A JP1813179 A JP 1813179A JP 1813179 A JP1813179 A JP 1813179A JP S55110082 A JPS55110082 A JP S55110082A
Authority
JP
Japan
Prior art keywords
fiber
groove
light emitting
substrate
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1813179A
Other languages
Japanese (ja)
Inventor
Osamu Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1813179A priority Critical patent/JPS55110082A/en
Publication of JPS55110082A publication Critical patent/JPS55110082A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To match the positions of the light emitting device and the fiber easily and with high precision by providing a groove in the direction of emission of light on a semiconductor substrate and enclosing the fiber in the groove.
CONSTITUTION: By opening a window on the SiO2 film on GaAs substrate 1, p- layer 8 is provided and Al upper electrode 6 is formed. After the back surface of the substrate is polished, AuGe-Ni electrode 3 is formed by evaporation. Next, by using a solution of phosphric acid, substrate 1 and SiO2 film are etched to form groove 4, and scribing is done at specified places. Fiber 2 is placed in groove 4. The gap between the end surface of the fiber and the light emitting part is filled with transparent resin having a refractive index larger than that of air and thereby the bonding efficiency is increased. The fiber is fixed to the groove. By this structure, positioning is done easily and with high precision.
COPYRIGHT: (C)1980,JPO&Japio
JP1813179A 1979-02-19 1979-02-19 Semiconductor light emitting device Pending JPS55110082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1813179A JPS55110082A (en) 1979-02-19 1979-02-19 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1813179A JPS55110082A (en) 1979-02-19 1979-02-19 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS55110082A true JPS55110082A (en) 1980-08-25

Family

ID=11963045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1813179A Pending JPS55110082A (en) 1979-02-19 1979-02-19 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS55110082A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889047U (en) * 1981-12-11 1983-06-16 ジヨンソン株式会社 aromatic container
JPS61271875A (en) * 1985-05-27 1986-12-02 Mitsubishi Electric Corp Semiconductor light receiving element
JPH02151094A (en) * 1988-12-01 1990-06-11 Sharp Corp Semiconductor laser device
JPH04230050A (en) * 1990-06-22 1992-08-19 Internatl Business Mach Corp <Ibm> Apparatus and method for passive alignment, fixing method of object, method and apparatus for alignment of object, and batch manufacturing method
EP0742613A1 (en) * 1995-05-12 1996-11-13 Commissariat A L'energie Atomique Microlaser cavitiy and pulsed passively Q-switched solid state microlaser using an external trigger

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889047U (en) * 1981-12-11 1983-06-16 ジヨンソン株式会社 aromatic container
JPS623156Y2 (en) * 1981-12-11 1987-01-24
JPS61271875A (en) * 1985-05-27 1986-12-02 Mitsubishi Electric Corp Semiconductor light receiving element
JPH02151094A (en) * 1988-12-01 1990-06-11 Sharp Corp Semiconductor laser device
JPH04230050A (en) * 1990-06-22 1992-08-19 Internatl Business Mach Corp <Ibm> Apparatus and method for passive alignment, fixing method of object, method and apparatus for alignment of object, and batch manufacturing method
EP0742613A1 (en) * 1995-05-12 1996-11-13 Commissariat A L'energie Atomique Microlaser cavitiy and pulsed passively Q-switched solid state microlaser using an external trigger
FR2734096A1 (en) * 1995-05-12 1996-11-15 Commissariat Energie Atomique CAVITE MICROLASER AND IMPULSIVE SOLID IMPULSIVE MICROLASER WITH PASSIVE TRIPPING AND EXTERNAL CONTROL

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