JPS5726482A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS5726482A
JPS5726482A JP10181580A JP10181580A JPS5726482A JP S5726482 A JPS5726482 A JP S5726482A JP 10181580 A JP10181580 A JP 10181580A JP 10181580 A JP10181580 A JP 10181580A JP S5726482 A JPS5726482 A JP S5726482A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
layers
band gap
photodetecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10181580A
Other languages
Japanese (ja)
Other versions
JPS6259471B2 (en
Inventor
Hiroshi Ishikawa
Sukehisa Hiyamizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10181580A priority Critical patent/JPS5726482A/en
Publication of JPS5726482A publication Critical patent/JPS5726482A/en
Publication of JPS6259471B2 publication Critical patent/JPS6259471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the photoelectric conversion efficiency of a semiconductor photodetector by increasing the refractive index of a photodetecting active layer higher than that of upper and lower clad layers disposed at both sides of the active layer. CONSTITUTION:A lower clad layer 2 made of semiconductor having relatively large band gap is formed on an insulating substrate 1. A photodetecting active layer 3 made of semiconductor having small band gap is formed on the layer 2. Then, an upper clad layer 4 made of semiconductor having larger band gap than the semiconductor of the layer 3 is formed on the layer 3, and positive and negative electrodes 5, 6 are formed on the layer 4. The electrodes 5, 6 and the layer 3 are connected via low resistance regions 8, 9, respectively. Thus, the refractive index of the layer 3 becomes higher than that of the layers 2, 4 to form a waveguide. Thus, the light signal incident to the layers 2-4 is converged to the layer 3 and is sequentially converged, and the electrons and the holes are separately generated thereat. Since the light signal incident to the layer 3 is not leaked to the layers 2, 4 in this manner, the utility rate of the incident light can be increased, and the photoconversion efficiency can be improved.
JP10181580A 1980-07-24 1980-07-24 Semiconductor photodetector Granted JPS5726482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10181580A JPS5726482A (en) 1980-07-24 1980-07-24 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10181580A JPS5726482A (en) 1980-07-24 1980-07-24 Semiconductor photodetector

Publications (2)

Publication Number Publication Date
JPS5726482A true JPS5726482A (en) 1982-02-12
JPS6259471B2 JPS6259471B2 (en) 1987-12-11

Family

ID=14310615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10181580A Granted JPS5726482A (en) 1980-07-24 1980-07-24 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5726482A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247979A (en) * 1984-05-24 1985-12-07 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor optical element
JPS62277775A (en) * 1986-05-26 1987-12-02 Nec Corp Semiconductor photodetector
JPS62281479A (en) * 1986-05-30 1987-12-07 Nec Corp Semiconductor photodetector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247979A (en) * 1984-05-24 1985-12-07 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor optical element
JPS62277775A (en) * 1986-05-26 1987-12-02 Nec Corp Semiconductor photodetector
JPS62281479A (en) * 1986-05-30 1987-12-07 Nec Corp Semiconductor photodetector

Also Published As

Publication number Publication date
JPS6259471B2 (en) 1987-12-11

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