JPS5522813A - Semiconductor photo decector - Google Patents
Semiconductor photo decectorInfo
- Publication number
- JPS5522813A JPS5522813A JP9459178A JP9459178A JPS5522813A JP S5522813 A JPS5522813 A JP S5522813A JP 9459178 A JP9459178 A JP 9459178A JP 9459178 A JP9459178 A JP 9459178A JP S5522813 A JPS5522813 A JP S5522813A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- basic plate
- electrode
- guardrings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve characteristics of quantum efficiency, noise and response by providing a waveguide path in parallel to a composition plane of a light detector having metal-semiconductor shottky composition and absorbing substantially entrnece light propagated within the waveguide path into the metal.
CONSTITUTION: N or ν layer 2 is glown onto N+ Si basic plate and in a determined area two guardrings 5 are penetrated in the basic plate and difusely formed. Then a shottky electrode 3 is attached to the area including these guardrings and a derivative layer 6 is formed onto the layer 2 which does not have the electrode 3. Then a derivative layer 7 adapted to form a waveguide having higher refractive index than that of the layer 6 is attached over the layer 6 and layer 3 and a direct current power source is connected between a projecting end of the layer 3 and an ohmic electrode 4 disposed in the inner face of the basic plate 1. Thus light hν entered into the layer 7 is enclosed within the layer 7 and reach at the area contacting with the layer 3 and as the layer 3 absorb all light, there is no energy loss and effective electron charge is occured.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9459178A JPS5522813A (en) | 1978-08-04 | 1978-08-04 | Semiconductor photo decector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9459178A JPS5522813A (en) | 1978-08-04 | 1978-08-04 | Semiconductor photo decector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5522813A true JPS5522813A (en) | 1980-02-18 |
Family
ID=14114512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9459178A Pending JPS5522813A (en) | 1978-08-04 | 1978-08-04 | Semiconductor photo decector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5522813A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789272A (en) * | 1980-11-25 | 1982-06-03 | Mitsubishi Electric Corp | Semiconductor light detection element |
| US4857973A (en) * | 1987-05-14 | 1989-08-15 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon waveguide with monolithically integrated Schottky barrier photodetector |
| WO2008136479A1 (en) * | 2007-05-01 | 2008-11-13 | Nec Corporation | Waveguide path coupling-type photodiode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5014360A (en) * | 1973-04-20 | 1975-02-14 |
-
1978
- 1978-08-04 JP JP9459178A patent/JPS5522813A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5014360A (en) * | 1973-04-20 | 1975-02-14 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789272A (en) * | 1980-11-25 | 1982-06-03 | Mitsubishi Electric Corp | Semiconductor light detection element |
| US4857973A (en) * | 1987-05-14 | 1989-08-15 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon waveguide with monolithically integrated Schottky barrier photodetector |
| WO2008136479A1 (en) * | 2007-05-01 | 2008-11-13 | Nec Corporation | Waveguide path coupling-type photodiode |
| JPWO2008136479A1 (en) * | 2007-05-01 | 2010-07-29 | 日本電気株式会社 | Waveguide-coupled photodiode |
| US8467637B2 (en) | 2007-05-01 | 2013-06-18 | Nec Corporation | Waveguide path coupling-type photodiode |
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