JPS5789272A - Semiconductor light detection element - Google Patents

Semiconductor light detection element

Info

Publication number
JPS5789272A
JPS5789272A JP55167298A JP16729880A JPS5789272A JP S5789272 A JPS5789272 A JP S5789272A JP 55167298 A JP55167298 A JP 55167298A JP 16729880 A JP16729880 A JP 16729880A JP S5789272 A JPS5789272 A JP S5789272A
Authority
JP
Japan
Prior art keywords
metal
light
semiconductor light
detection element
light detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55167298A
Other languages
Japanese (ja)
Inventor
Katsuhiro Hirata
Masahiko Denda
Natsuo Tsubouchi
Masaaki Kimata
Shigeyuki Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55167298A priority Critical patent/JPS5789272A/en
Priority to DE19813145840 priority patent/DE3145840A1/en
Publication of JPS5789272A publication Critical patent/JPS5789272A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the sensitivity to light and decrease sensitivity dispersion by making light irradiate from the side of a metal or metal silicide provided at a light detector. CONSTITUTION:A opening 9 is made on an electrode 6 at a light detector 5 on a P type Si substrate 1 in such a way that the light can fall through the side of a metal or metal silicide. Platinum or P type silicide are used for the metal or the metal silicide. This improves the sensitivity of the detector and decrease sensitivity dispersion.
JP55167298A 1980-11-25 1980-11-25 Semiconductor light detection element Pending JPS5789272A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55167298A JPS5789272A (en) 1980-11-25 1980-11-25 Semiconductor light detection element
DE19813145840 DE3145840A1 (en) 1980-11-25 1981-11-19 Optical Schottky-type detector device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55167298A JPS5789272A (en) 1980-11-25 1980-11-25 Semiconductor light detection element

Publications (1)

Publication Number Publication Date
JPS5789272A true JPS5789272A (en) 1982-06-03

Family

ID=15847153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55167298A Pending JPS5789272A (en) 1980-11-25 1980-11-25 Semiconductor light detection element

Country Status (1)

Country Link
JP (1) JPS5789272A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263867A (en) * 1990-03-14 1991-11-25 Mitsubishi Electric Corp Infrared-ray solid-state image sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117035A (en) * 1974-08-02 1976-02-10 Juichi Shimizu Sekyusutoobuno jidoshokasochi
JPS5522813A (en) * 1978-08-04 1980-02-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo decector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117035A (en) * 1974-08-02 1976-02-10 Juichi Shimizu Sekyusutoobuno jidoshokasochi
JPS5522813A (en) * 1978-08-04 1980-02-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo decector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263867A (en) * 1990-03-14 1991-11-25 Mitsubishi Electric Corp Infrared-ray solid-state image sensor

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