JPS55153385A - Current squeezing type semiconductor device - Google Patents

Current squeezing type semiconductor device

Info

Publication number
JPS55153385A
JPS55153385A JP6164679A JP6164679A JPS55153385A JP S55153385 A JPS55153385 A JP S55153385A JP 6164679 A JP6164679 A JP 6164679A JP 6164679 A JP6164679 A JP 6164679A JP S55153385 A JPS55153385 A JP S55153385A
Authority
JP
Japan
Prior art keywords
layer
type
cap layer
type semiconductor
extending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6164679A
Other languages
Japanese (ja)
Inventor
Kunishige Oe
Seigo Ando
Koichi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6164679A priority Critical patent/JPS55153385A/en
Publication of JPS55153385A publication Critical patent/JPS55153385A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the linearity of light output with better heat radiation during the operation by arranging a p-type cap layer locally extending into a part on a p- type semiconductor layer while a metal electrode is arranged continuously extending into the area lacking the p-type cap layer. CONSTITUTION:An n-type clad layer 2, an active layer 3 and a p-type clad layer 4 by InP are laminated in sequence on an n-type semiconductor substrate 1 by InP to form a laminated body 5. A p-type cap layer 6 is formed extending in stripe into a part of the layer 4 of the body 5. A metal electrode 9 is arranged continuously extending from the cap layer 6 up to the portion lacking cap layer 6 on the layer 4 of the laminated body 5 in contact with the layer 6. The cap layer 6 uses the layer of Ga1-InyAs1-zPz where y is set at 0.4<y<0.8 and z at 0<=z<0.6. This can better the radiation of the heat generated inside during the operation thereby improving the linearity of the light output.
JP6164679A 1979-05-18 1979-05-18 Current squeezing type semiconductor device Pending JPS55153385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6164679A JPS55153385A (en) 1979-05-18 1979-05-18 Current squeezing type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6164679A JPS55153385A (en) 1979-05-18 1979-05-18 Current squeezing type semiconductor device

Publications (1)

Publication Number Publication Date
JPS55153385A true JPS55153385A (en) 1980-11-29

Family

ID=13177185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6164679A Pending JPS55153385A (en) 1979-05-18 1979-05-18 Current squeezing type semiconductor device

Country Status (1)

Country Link
JP (1) JPS55153385A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
JPS5972723A (en) * 1982-10-19 1984-04-24 Matsushita Electric Ind Co Ltd Formation of ohmic electrode of iii-v group compound semiconductor
JPS61162058U (en) * 1985-03-27 1986-10-07

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137280A (en) * 1976-05-11 1977-11-16 Thomson Csf Contacting structure on semiconductor array

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137280A (en) * 1976-05-11 1977-11-16 Thomson Csf Contacting structure on semiconductor array

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
JPS5972723A (en) * 1982-10-19 1984-04-24 Matsushita Electric Ind Co Ltd Formation of ohmic electrode of iii-v group compound semiconductor
JPS61162058U (en) * 1985-03-27 1986-10-07

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