JPS61162058U - - Google Patents
Info
- Publication number
- JPS61162058U JPS61162058U JP1985045672U JP4567285U JPS61162058U JP S61162058 U JPS61162058 U JP S61162058U JP 1985045672 U JP1985045672 U JP 1985045672U JP 4567285 U JP4567285 U JP 4567285U JP S61162058 U JPS61162058 U JP S61162058U
- Authority
- JP
- Japan
- Prior art keywords
- conductive region
- semiconductor device
- thick film
- film layer
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims 1
- 239000008188 pellet Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1図は本考案の一実施例を示す半導体装置の
要部斜視図、第2図は第1図におけるA―A線に
て切断した断面図、第3図は従来例を示す半導体
装置の要部斜視図、第4図はその断面図である。
2……一導電領域(P層)、3……他導電領域
(N層)、4,5……電極、42,52……厚膜
層。
FIG. 1 is a perspective view of the main parts of a semiconductor device showing an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line A--A in FIG. 1, and FIG. 3 is a conventional example of a semiconductor device. A perspective view of the main part, and FIG. 4 is a sectional view thereof. 2... One conductive region (P layer), 3... Other conductive region (N layer), 4, 5... Electrode, 42, 52... Thick film layer.
Claims (1)
域上のそれぞれに、放熱用厚膜層を形成したこと
を特徴とする半導体装置。 A semiconductor device characterized in that a thick film layer for heat dissipation is formed on one conductive region and the other conductive region on the surface of a pellet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985045672U JPH0717159Y2 (en) | 1985-03-27 | 1985-03-27 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985045672U JPH0717159Y2 (en) | 1985-03-27 | 1985-03-27 | Resin-sealed semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61162058U true JPS61162058U (en) | 1986-10-07 |
JPH0717159Y2 JPH0717159Y2 (en) | 1995-04-19 |
Family
ID=30559381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985045672U Expired - Lifetime JPH0717159Y2 (en) | 1985-03-27 | 1985-03-27 | Resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0717159Y2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4918598U (en) * | 1972-05-18 | 1974-02-16 | ||
JPS5419375A (en) * | 1977-07-14 | 1979-02-14 | Mitsubishi Electric Corp | Semiconductor device |
JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
-
1985
- 1985-03-27 JP JP1985045672U patent/JPH0717159Y2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4918598U (en) * | 1972-05-18 | 1974-02-16 | ||
JPS5419375A (en) * | 1977-07-14 | 1979-02-14 | Mitsubishi Electric Corp | Semiconductor device |
JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0717159Y2 (en) | 1995-04-19 |