JPS5860951U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5860951U JPS5860951U JP15604181U JP15604181U JPS5860951U JP S5860951 U JPS5860951 U JP S5860951U JP 15604181 U JP15604181 U JP 15604181U JP 15604181 U JP15604181 U JP 15604181U JP S5860951 U JPS5860951 U JP S5860951U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- semiconductor equipment
- insulating film
- groove portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図乃至第３図はそれぞれ従来の半導体装置の素子構
造を示す断面図、第４図はこの考案の一実施例に係る半
導体装置の斜視図である。
２１・・・・・・Ｐ型シリコン基板、２２・・・・・・
ｎ型ベース層、２３・・・・・・Ｐ型ベース層、２４・
・・・・・ｎ型エミツタ層、２７・・・・・・ｎ＋型層
（アニユラ・リング）、２Ｂ・・・・・−３ｉＯ７膜。1 to 3 are cross-sectional views showing the element structure of a conventional semiconductor device, respectively, and FIG. 4 is a perspective view of a semiconductor device according to an embodiment of the invention. 21...P-type silicon substrate, 22...
N-type base layer, 23... P-type base layer, 24.
. . . n-type emitter layer, 27 . . . n + type layer (annual ring), 2B . . . -3iO7 film.
Claims (1)
の半導体層の表面近傍にリング状に設けられた該半導体
層と同一導電型でかつ該半導体層より高濃度の第二の半
導体層と、前記半導体基体上に設けられた絶縁膜と、前
記絶縁膜の前記第二の半導体層に沿った領域に一部が該
第二の半導体層に達つするように形成された溝部と、前
記溝部に沿って配設された金属層とを具備したことを特
徴とする半導体装置。(i) a semiconductor substrate having a first semiconductor layer; a second semiconductor layer provided in a ring shape near the surface of the first semiconductor layer and having the same conductivity type as the semiconductor layer and having a higher concentration than the semiconductor layer; , an insulating film provided on the semiconductor substrate; a groove portion formed in a region of the insulating film along the second semiconductor layer so that a portion thereof reaches the second semiconductor layer; 1. A semiconductor device comprising: a metal layer disposed along a groove portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15604181U JPS5860951U (en) | 1981-10-20 | 1981-10-20 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15604181U JPS5860951U (en) | 1981-10-20 | 1981-10-20 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860951U true JPS5860951U (en) | 1983-04-25 |
| JPH0126114Y2 JPH0126114Y2 (en) | 1989-08-04 |
Family
ID=29948594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15604181U Granted JPS5860951U (en) | 1981-10-20 | 1981-10-20 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860951U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019160927A (en) * | 2018-03-09 | 2019-09-19 | 新電元工業株式会社 | Semiconductor device |
-
1981
- 1981-10-20 JP JP15604181U patent/JPS5860951U/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019160927A (en) * | 2018-03-09 | 2019-09-19 | 新電元工業株式会社 | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0126114Y2 (en) | 1989-08-04 |
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