JPS60144255U - transistor - Google Patents
transistorInfo
- Publication number
- JPS60144255U JPS60144255U JP2944884U JP2944884U JPS60144255U JP S60144255 U JPS60144255 U JP S60144255U JP 2944884 U JP2944884 U JP 2944884U JP 2944884 U JP2944884 U JP 2944884U JP S60144255 U JPS60144255 U JP S60144255U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor substrate
- region
- transistor
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図及び第2図は従来のトランジスタの断面図及び等
価回路図、第3図及び第4図は本考案の一実施例を示す
断面図及び等価回路図、第5図乃至第9図は第3図のト
ランジスタの製造例を示す各工稈での断面図である。,1 and 2 are a sectional view and an equivalent circuit diagram of a conventional transistor, FIGS. 3 and 4 are a sectional view and an equivalent circuit diagram showing an embodiment of the present invention, and FIGS. 5 to 9 are FIG. 4 is a cross-sectional view of each culm showing an example of manufacturing the transistor shown in FIG. 3; ,
Claims (1)
拡散でベース領域とエミツタ領域を順次に形成したもの
において、前記半導体基板の裏面にポリシリコン層によ
る抵抗.層と、電極引出層とを積層形成したことを特徴
とするトランジスタ。A base region and an emitter region are sequentially formed by selective diffusion of impurities on a semiconductor substrate of one conductivity type, which serves as a collector region, and a resistor is formed by a polysilicon layer on the back surface of the semiconductor substrate. A transistor characterized in that a layer and an electrode extraction layer are laminated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2944884U JPS60144255U (en) | 1984-02-29 | 1984-02-29 | transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2944884U JPS60144255U (en) | 1984-02-29 | 1984-02-29 | transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60144255U true JPS60144255U (en) | 1985-09-25 |
Family
ID=30528262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2944884U Pending JPS60144255U (en) | 1984-02-29 | 1984-02-29 | transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60144255U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439769A (en) * | 1987-08-06 | 1989-02-10 | Fuji Electric Co Ltd | Semiconductor device |
-
1984
- 1984-02-29 JP JP2944884U patent/JPS60144255U/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439769A (en) * | 1987-08-06 | 1989-02-10 | Fuji Electric Co Ltd | Semiconductor device |
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