JPS60137450U - semiconductor resistance device - Google Patents
semiconductor resistance deviceInfo
- Publication number
- JPS60137450U JPS60137450U JP2543284U JP2543284U JPS60137450U JP S60137450 U JPS60137450 U JP S60137450U JP 2543284 U JP2543284 U JP 2543284U JP 2543284 U JP2543284 U JP 2543284U JP S60137450 U JPS60137450 U JP S60137450U
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- region
- type
- resistance device
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は本考案の一実施例を示す断面図、第2図は従来
例を示す断面図である。
1.21・・・半導体基板、2.22・・・エピタキシ
ャル層、3,23・・・分離領域、4,24・・・島領
域、5.6.26・・・拡散領域、7.8.27・・・
抵抗領域、9,10,11,12,28,29・・・電
極。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional example. 1.21... Semiconductor substrate, 2.22... Epitaxial layer, 3, 23... Isolation region, 4, 24... Island region, 5.6.26... Diffusion region, 7.8 .27...
Resistance region, 9, 10, 11, 12, 28, 29... electrode.
Claims (1)
ピタキシャル層と、このエピタキシャル層を分離領域で
分離した島領域と、この島領域に形成された少なくとも
2個のP型拡散領域と、この拡散領域内に夫々形成され
たN型の抵抗領域と、この抵抗領域の夫々の両端に接触
する電極とを備え、前記抵抗領域の一方の電極を延在し
て対応する拡散領域と接触させると共に、前記抵抗領域
間を直列に接続したことを特徴とする半導体抵抗装置。A P-type semiconductor substrate, an N-type epitaxial layer provided on this substrate, an island region separated from this epitaxial layer by a separation region, and at least two P-type diffusion regions formed in this island region. , comprising N-type resistance regions formed in the respective diffusion regions and electrodes in contact with both ends of each of the resistance regions, and one electrode of the resistance region is extended to contact the corresponding diffusion region. A semiconductor resistance device characterized in that the resistance regions are connected in series.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2543284U JPS60137450U (en) | 1984-02-23 | 1984-02-23 | semiconductor resistance device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2543284U JPS60137450U (en) | 1984-02-23 | 1984-02-23 | semiconductor resistance device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60137450U true JPS60137450U (en) | 1985-09-11 |
Family
ID=30520493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2543284U Pending JPS60137450U (en) | 1984-02-23 | 1984-02-23 | semiconductor resistance device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60137450U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02134904A (en) * | 1988-11-15 | 1990-05-23 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5633157U (en) * | 1979-08-20 | 1981-04-01 |
-
1984
- 1984-02-23 JP JP2543284U patent/JPS60137450U/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5633157U (en) * | 1979-08-20 | 1981-04-01 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02134904A (en) * | 1988-11-15 | 1990-05-23 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS60137450U (en) | semiconductor resistance device | |
JPS60137451U (en) | semiconductor resistance device | |
JPS60125749U (en) | semiconductor switching device | |
JPS58106954U (en) | diode | |
JPS5936264U (en) | Shock barrier semiconductor device | |
JPS60144255U (en) | transistor | |
JPS60125751U (en) | semiconductor switching device | |
JPS58164250U (en) | semiconductor temperature sensing element | |
JPS64348U (en) | ||
JPS60125750U (en) | semiconductor switching device | |
JPS5832662U (en) | semiconductor equipment | |
JPS60125747U (en) | capacitor | |
JPS60153548U (en) | Lateral transistor | |
JPS6016568U (en) | photovoltaic device | |
JPS6078147U (en) | capacitor | |
JPS60153550U (en) | Lateral transistor | |
JPS58106953U (en) | transistor | |
JPS5989556U (en) | semiconductor resistance device | |
JPS5860951U (en) | semiconductor equipment | |
JPS63134558U (en) | ||
JPS61207047U (en) | ||
JPS58124953U (en) | Semiconductor integrated circuit device | |
JPS61162065U (en) | ||
JPS6113956U (en) | Zener diode incorporated into integrated circuit | |
JPH0217858U (en) |