JPS58164250U - semiconductor temperature sensing element - Google Patents
semiconductor temperature sensing elementInfo
- Publication number
- JPS58164250U JPS58164250U JP1982062588U JP6258882U JPS58164250U JP S58164250 U JPS58164250 U JP S58164250U JP 1982062588 U JP1982062588 U JP 1982062588U JP 6258882 U JP6258882 U JP 6258882U JP S58164250 U JPS58164250 U JP S58164250U
- Authority
- JP
- Japan
- Prior art keywords
- collector
- electrode
- sensing element
- temperature sensing
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims 3
- 239000000758 substrate Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は、従来のトランジスタ温度センサの断面図、第
２図は、従来のダーリントン接続温度センサの回路図、
第３図は、本考案による温度センサの断面図、第４図は
、本考案による温度センサの回路図、第５図は、本考案
による温度センサの平面図である。
５・・・エミッタ電極、３・・・ベース電極、４・・・
コレクタ電極、７・・・Ｎ子弟２コレクタ領域、８・・
・Ｎ＋エミッタ領域、１０・・・Ｐ＋分離拡散領域、１
２・・・Ｐ＋分離拡散領域、１３・・・Ｎ＋コレクタ拡
散領域、２２・・・ベース、第２コレクタコンタクト領
域。FIG. 1 is a cross-sectional view of a conventional transistor temperature sensor, and FIG. 2 is a circuit diagram of a conventional Darlington connection temperature sensor.
FIG. 3 is a sectional view of the temperature sensor according to the present invention, FIG. 4 is a circuit diagram of the temperature sensor according to the present invention, and FIG. 5 is a plan view of the temperature sensor according to the present invention. 5... Emitter electrode, 3... Base electrode, 4...
Collector electrode, 7... N children 2 collector region, 8...
・N+ emitter region, 10...P+ isolation diffusion region, 1
2...P+ isolation diffusion region, 13...N+ collector diffusion region, 22...Base, second collector contact region.
Claims (1)
トン接続された少なくとも２個以上のトランジスタから
成り、ダーリントン接続初段のトランジスタのベースを
上記共通コレクタに接続して第１の電極となし、ダーリ
ントン接続終段のトランジスタのエミッタを第２の電極
とし、初段のトランジスタのトランジスタ以外のベース
領域内で上記共通コレクタから分離して設けられた第２
のコレクタ領域と上記ベース領域を接続した構造におい
て、前記第２のコレクタ部分を凸凹形状にしたことを特
徴とする半導体感温素子。The semiconductor substrate of one conductivity type is used as a common collector, and consists of at least two or more transistors connected in Darlington, and the base of the transistor in the first stage of Darlington connection is connected to the common collector to serve as the first electrode, and The emitter of the transistor in the first stage is used as the second electrode, and a second electrode is provided in the base region of the transistor in the first stage separated from the common collector.
1. A semiconductor thermosensitive element having a structure in which the collector region and the base region are connected to each other, wherein the second collector portion has an uneven shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982062588U JPS58164250U (en) | 1982-04-28 | 1982-04-28 | semiconductor temperature sensing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982062588U JPS58164250U (en) | 1982-04-28 | 1982-04-28 | semiconductor temperature sensing element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58164250U true JPS58164250U (en) | 1983-11-01 |
| JPS6344744Y2 JPS6344744Y2 (en) | 1988-11-21 |
Family
ID=30072736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982062588U Granted JPS58164250U (en) | 1982-04-28 | 1982-04-28 | semiconductor temperature sensing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58164250U (en) |
-
1982
- 1982-04-28 JP JP1982062588U patent/JPS58164250U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6344744Y2 (en) | 1988-11-21 |
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