JPS5892744U - semiconductor element - Google Patents

semiconductor element

Info

Publication number
JPS5892744U
JPS5892744U JP18619181U JP18619181U JPS5892744U JP S5892744 U JPS5892744 U JP S5892744U JP 18619181 U JP18619181 U JP 18619181U JP 18619181 U JP18619181 U JP 18619181U JP S5892744 U JPS5892744 U JP S5892744U
Authority
JP
Japan
Prior art keywords
semiconductor element
shallow
abstract
collector
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18619181U
Other languages
Japanese (ja)
Other versions
JPH0328517Y2 (en
Inventor
秀一郎 丸田
Original Assignee
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社東芝 filed Critical 株式会社東芝
Priority to JP18619181U priority Critical patent/JPS5892744U/en
Publication of JPS5892744U publication Critical patent/JPS5892744U/en
Application granted granted Critical
Publication of JPH0328517Y2 publication Critical patent/JPH0328517Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は出力トランジスタを示す回路、第２図はこの考
案に係る半導体素子のパターン平面図、第３図は第２図
に示したパターン平面図のａ−ａ　　゛′断面図、第４
図は第２図に示したパターン平面図のｂ−ｂ、’平面図
である。 １１・・・・・・Ｎ＋コレクタ領域、１２・・・・・・
コレクタ９．１３・・・・・・Ｐ＋ベース領域、１４・
・・・・・Ｎ＋エミッタ領域、１５・・・・・・エミッ
タ電極、Ｈ□、Ｈ２・・・・・・コンタクトホール。FIG. 1 is a circuit showing an output transistor, FIG. 2 is a pattern plan view of a semiconductor element according to this invention, FIG.
The figure is a b-b' plan view of the pattern plan view shown in FIG. 2. 11...N+collector area, 12...
Collector 9.13...P+ base area, 14.
...N+ emitter region, 15...emitter electrode, H□, H2...contact hole.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] コレクタ用として形成されたＳｈａｌｌｏｗＮ＋層と該
ＳｈａｌｌｏｗＮ＋層上に分割された電極取り出し用の
コンタクトホール間を抵抗として用いたことを特徴とす
る半導体素子。A semiconductor device characterized in that a resistor is used between a shallow N+ layer formed for a collector and a contact hole for taking out an electrode divided on the shallow N+ layer.
JP18619181U 1981-12-14 1981-12-14 semiconductor element Granted JPS5892744U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18619181U JPS5892744U (en) 1981-12-14 1981-12-14 semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18619181U JPS5892744U (en) 1981-12-14 1981-12-14 semiconductor element

Publications (2)

Publication Number Publication Date
JPS5892744U true JPS5892744U (en) 1983-06-23
JPH0328517Y2 JPH0328517Y2 (en) 1991-06-19

Family

ID=29987921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18619181U Granted JPS5892744U (en) 1981-12-14 1981-12-14 semiconductor element

Country Status (1)

Country Link
JP (1) JPS5892744U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221665A (en) * 1984-01-24 1986-10-02 Rohm Co Ltd Detecting method for current of output transistor
JP2007174565A (en) * 2005-12-26 2007-07-05 Denso Corp Semiconductor circuit device
JP2012533889A (en) * 2009-07-15 2012-12-27 クリー インコーポレイテッド High gain wide bandgap Darlington transistor and associated manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221665A (en) * 1984-01-24 1986-10-02 Rohm Co Ltd Detecting method for current of output transistor
JP2007174565A (en) * 2005-12-26 2007-07-05 Denso Corp Semiconductor circuit device
JP4609308B2 (en) * 2005-12-26 2011-01-12 株式会社デンソー Semiconductor circuit device
JP2012533889A (en) * 2009-07-15 2012-12-27 クリー インコーポレイテッド High gain wide bandgap Darlington transistor and associated manufacturing method

Also Published As

Publication number Publication date
JPH0328517Y2 (en) 1991-06-19

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