JPS61106047U - - Google Patents
Info
- Publication number
- JPS61106047U JPS61106047U JP19325884U JP19325884U JPS61106047U JP S61106047 U JPS61106047 U JP S61106047U JP 19325884 U JP19325884 U JP 19325884U JP 19325884 U JP19325884 U JP 19325884U JP S61106047 U JPS61106047 U JP S61106047U
- Authority
- JP
- Japan
- Prior art keywords
- region
- contact region
- resistors
- semiconductor device
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
第1図イ〜ロは本考案による半導体抵抗装置を
示す平面図、第2図イは一般的な分周回路の回路
図、第2図ロは従来の半導体抵抗装置を示す平面
図である。
主な図番の説明、2a,2bはコレクタコンタ
クト領域、3は共通コンタクト領域、Q1,Q2
はトランジスタ、R1,R2は抵抗である。
1A to 1B are plan views showing a semiconductor resistance device according to the present invention, FIG. 2A is a circuit diagram of a general frequency dividing circuit, and FIG. 2B is a plan view showing a conventional semiconductor resistance device. Explanation of main drawing numbers, 2a and 2b are collector contact areas, 3 is common contact area, Q 1 , Q 2
is a transistor, and R 1 and R 2 are resistors.
Claims (1)
ひとつの島領域内にその一端は共通コンタクト領
域に共通に接続され他端は分離されたコンタクト
領域にそれぞれ接続されたふたつの抵抗と前記コ
ンタクト領域上の絶縁膜にそれぞれ設けられたコ
ンタクトホールとを具備した半導体装置において
、前記共通コンタクト領域がそれに設けられた前
記コンタクトホールより十分大きくすることによ
り前記ふたつの抵抗として実質的に動作する領域
の長さが変化しないようにしたことを特徴とする
半導体装置。 In one island region electrically isolated from other regions on the surface of the semiconductor substrate, two resistors are connected at one end to a common contact region and the other end is connected to a separate contact region, respectively, and the contact region. In a semiconductor device having contact holes respectively provided in an upper insulating film, the common contact region is made sufficiently larger than the contact holes provided therein, so that the length of the region that substantially operates as the two resistors is increased. 1. A semiconductor device characterized in that the temperature does not change.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984193258U JPH0445254Y2 (en) | 1984-12-19 | 1984-12-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1984193258U JPH0445254Y2 (en) | 1984-12-19 | 1984-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61106047U true JPS61106047U (en) | 1986-07-05 |
JPH0445254Y2 JPH0445254Y2 (en) | 1992-10-23 |
Family
ID=30750677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1984193258U Expired JPH0445254Y2 (en) | 1984-12-19 | 1984-12-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0445254Y2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5867058A (en) * | 1981-10-16 | 1983-04-21 | Nec Corp | Semiconductor device |
JPS59101859A (en) * | 1982-12-02 | 1984-06-12 | Nec Corp | Semiconductor device |
-
1984
- 1984-12-19 JP JP1984193258U patent/JPH0445254Y2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5867058A (en) * | 1981-10-16 | 1983-04-21 | Nec Corp | Semiconductor device |
JPS59101859A (en) * | 1982-12-02 | 1984-06-12 | Nec Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0445254Y2 (en) | 1992-10-23 |
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