JPH01112060U - - Google Patents

Info

Publication number
JPH01112060U
JPH01112060U JP615588U JP615588U JPH01112060U JP H01112060 U JPH01112060 U JP H01112060U JP 615588 U JP615588 U JP 615588U JP 615588 U JP615588 U JP 615588U JP H01112060 U JPH01112060 U JP H01112060U
Authority
JP
Japan
Prior art keywords
conductivity type
ground
layer
ground layer
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP615588U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP615588U priority Critical patent/JPH01112060U/ja
Publication of JPH01112060U publication Critical patent/JPH01112060U/ja
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の第1実施例の構成図、第2図
は本考案の第2実施例の構成図である。
FIG. 1 is a block diagram of a first embodiment of the present invention, and FIG. 2 is a block diagram of a second embodiment of the present invention.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一導電型の半導体基板1の表面に逆導電型のア
ース層2を形成して該アース層をアース端子VS
Sに接続し、また入力端子INを入力抵抗Rを通
して内部回路に接続した集積回路において、該ア
ース層表面に該基板と同一導電型の半導体層4を
形成して該入力端子INを該半導体層4にも接続
してなることを特徴とする集積回路。
A ground layer 2 of an opposite conductivity type is formed on the surface of a semiconductor substrate 1 of one conductivity type, and the ground layer is connected to a ground terminal VS.
In an integrated circuit in which the input terminal IN is connected to the internal circuit through the input resistor R, a semiconductor layer 4 of the same conductivity type as the substrate is formed on the surface of the ground layer, and the input terminal IN is connected to the semiconductor layer. An integrated circuit characterized in that it is also connected to 4.
JP615588U 1988-01-21 1988-01-21 Pending JPH01112060U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP615588U JPH01112060U (en) 1988-01-21 1988-01-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP615588U JPH01112060U (en) 1988-01-21 1988-01-21

Publications (1)

Publication Number Publication Date
JPH01112060U true JPH01112060U (en) 1989-07-27

Family

ID=31210146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP615588U Pending JPH01112060U (en) 1988-01-21 1988-01-21

Country Status (1)

Country Link
JP (1) JPH01112060U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175397A (en) * 2003-12-15 2005-06-30 Matsushita Electric Ind Co Ltd Semiconductor protector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175397A (en) * 2003-12-15 2005-06-30 Matsushita Electric Ind Co Ltd Semiconductor protector
JP4514443B2 (en) * 2003-12-15 2010-07-28 パナソニック株式会社 Semiconductor protection device

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