JPS60166155U - Junction type capacitor - Google Patents
Junction type capacitorInfo
- Publication number
- JPS60166155U JPS60166155U JP5314584U JP5314584U JPS60166155U JP S60166155 U JPS60166155 U JP S60166155U JP 5314584 U JP5314584 U JP 5314584U JP 5314584 U JP5314584 U JP 5314584U JP S60166155 U JPS60166155 U JP S60166155U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- electrode
- protective film
- type capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図および第２図は本考案による接合型コンデンサを
示すもので、第１図は平面図、第２図は笹１図の■−■
線断面図である。第３図および第４図は従来の接合型コ
ンデンサを示すもので、第３図は平面図、第４図は第３
図のＩＶ−ＩＶ線断面図である。
１・・・半導体基板、２・・・エピタキシャル層、４・
・・ベース領域（第１領域）、５・・・エミッタ領域（
第２領域）、６・・・保護膜、７・・・絶縁層、８・・
・ベース電極、９・・・エミッタ電極。Figures 1 and 2 show the junction type capacitor according to the present invention, where Figure 1 is a plan view and Figure 2 is a diagram of the
FIG. Figures 3 and 4 show conventional junction capacitors, with Figure 3 being a top view and Figure 4 being a
It is a sectional view taken along the line IV-IV in the figure. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Epitaxial layer, 4...
...Base region (first region), 5...Emitter region (
2nd region), 6... protective film, 7... insulating layer, 8...
-Base electrode, 9...emitter electrode.
Claims (1)
電型のエピタキシャル層と、このエピタキシャル層の表
層部に設けた一導電型の第１領域と、この第１領域の表
層部に設けられた逆導電型の第２領域と、前記エピタキ
シャル層表面を被覆する保護膜とを備え、前記第２領域
を取り囲むように第１領域の全周に亙ってオーミック接
触した第１電極を前記保護膜上に配設し、この第１電極
を保護膜上に設けた絶縁層で被覆すると共に、前記第２
領域とオーミック接触した第２電極を前記絶縁層上に配
設したことを特徴とする接合型コンデンサ。A semiconductor substrate of one conductivity type, an epitaxial layer of the opposite conductivity type laminated on this substrate, a first region of one conductivity type provided on the surface layer of this epitaxial layer, and a first region of one conductivity type provided on the surface layer of this first region. a second region of opposite conductivity type, and a protective film covering the surface of the epitaxial layer; The first electrode is disposed on the protective film, and the first electrode is covered with an insulating layer provided on the protective film, and the second electrode is disposed on the protective film.
A junction type capacitor, characterized in that a second electrode in ohmic contact with the region is disposed on the insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5314584U JPS60166155U (en) | 1984-04-11 | 1984-04-11 | Junction type capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5314584U JPS60166155U (en) | 1984-04-11 | 1984-04-11 | Junction type capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60166155U true JPS60166155U (en) | 1985-11-05 |
Family
ID=30573731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5314584U Pending JPS60166155U (en) | 1984-04-11 | 1984-04-11 | Junction type capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60166155U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133354A (en) * | 1987-11-19 | 1989-05-25 | Sanyo Electric Co Ltd | Semiconductor integrated circuit and manufacture thereof |
-
1984
- 1984-04-11 JP JP5314584U patent/JPS60166155U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133354A (en) * | 1987-11-19 | 1989-05-25 | Sanyo Electric Co Ltd | Semiconductor integrated circuit and manufacture thereof |
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