JPS58153463U - transistor element - Google Patents
transistor elementInfo
- Publication number
- JPS58153463U JPS58153463U JP5083982U JP5083982U JPS58153463U JP S58153463 U JPS58153463 U JP S58153463U JP 5083982 U JP5083982 U JP 5083982U JP 5083982 U JP5083982 U JP 5083982U JP S58153463 U JPS58153463 U JP S58153463U
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor element
- emitter
- electrode
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図及び第２図は従来のトランジスタ素子の二側を示
す断面図、第３図のイと口は２つのトランジスタの複合
例を示す等価回路図、第４図及び第５図は本考案の一実
施例を示す平面図及びＸ−Ｘ線断面図、第６図は第４図
のトランジスタ素子の製造に使用される半導体ウェーハ
の側面図、第７図及び第８図は第４図のトランジスタ素
子とリードフレームの接続時の部分平面図及びＹ−Ｙ線
断面図、第９図は製品化されたトランジスタの一例を示
す斜視図である。
９・・・・・・半導体基板、１０．１１・・・・・・ベ
ース領域、１２．１３・・・・・・エミッタ値域、１４
・・間ベース電極、１５・・・・・・エミッタ電極、１
６・・・・・・コレクタ電ｔＬ１７・・・・・・ベース
電ｉ、１８・・・・・・エミッタ電極、１９・・・・・
・コレクタ電極。1 and 2 are cross-sectional views showing two sides of a conventional transistor element, A and A in FIG. 3 are equivalent circuit diagrams showing a composite example of two transistors, and FIGS. A plan view and a sectional view taken along the line X-X showing one embodiment, FIG. 6 is a side view of a semiconductor wafer used for manufacturing the transistor element shown in FIG. FIG. 9 is a partial plan view and a sectional view taken along the line Y-Y when a transistor element and a lead frame are connected, and a perspective view showing an example of a commercialized transistor. 9... Semiconductor substrate, 10.11... Base region, 12.13... Emitter value range, 14
... between base electrodes, 15 ... emitter electrodes, 1
6...Collector voltage tL17...Base voltage i, 18...Emitter electrode, 19...
・Collector electrode.
Claims (1)
不純物の選択拡散でベース領域とエミッタ領域を順次に
形成すると共に、当該両面のベース領域とエミッタ領域
上にベース電極及びエミッタ電極を、且つ半導体基板の
少くとも片面にコレクタ電極を形成したことを特徴とす
るトランジスタ素子。A base region and an emitter region are sequentially formed by selective diffusion of impurities on both surfaces of a semiconductor substrate of one conductivity type, which will serve as a common collector region, and a base electrode and an emitter electrode are formed on the base region and emitter region on both surfaces, and A transistor element characterized in that a collector electrode is formed on at least one side of a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5083982U JPS58153463U (en) | 1982-04-07 | 1982-04-07 | transistor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5083982U JPS58153463U (en) | 1982-04-07 | 1982-04-07 | transistor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58153463U true JPS58153463U (en) | 1983-10-14 |
Family
ID=30061621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5083982U Pending JPS58153463U (en) | 1982-04-07 | 1982-04-07 | transistor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153463U (en) |
-
1982
- 1982-04-07 JP JP5083982U patent/JPS58153463U/en active Pending
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