JPS611845U - semiconductor wafer - Google Patents

semiconductor wafer

Info

Publication number
JPS611845U
JPS611845U JP8563584U JP8563584U JPS611845U JP S611845 U JPS611845 U JP S611845U JP 8563584 U JP8563584 U JP 8563584U JP 8563584 U JP8563584 U JP 8563584U JP S611845 U JPS611845 U JP S611845U
Authority
JP
Japan
Prior art keywords
semiconductor wafer
abstract
transistor elements
electrodes
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8563584U
Other languages
Japanese (ja)
Inventor
五郎 池上
Original Assignee
関西日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 関西日本電気株式会社 filed Critical 関西日本電気株式会社
Priority to JP8563584U priority Critical patent/JPS611845U/en
Publication of JPS611845U publication Critical patent/JPS611845U/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】 第１図は本考案の一実施例を示す断面図、第２図及び第
３図は従来の半導体ウエーハを示す各断面図である。 １８・・・裏面電極（コレクタ電極）、１９・・・トラ
ンジスタ素子、２０・・・半導体ウエーハ、２１・・・
溝。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing an embodiment of the present invention, and FIGS. 2 and 3 are sectional views showing a conventional semiconductor wafer. 18... Back electrode (collector electrode), 19... Transistor element, 20... Semiconductor wafer, 21...
groove.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 複数のトランジスタ素子を表面電極を含め形成した半導
体ウエーハにおいて、裏面のトランジスタ素子間に裏面
電極より深く溝を形成したことを特徴とする半導体ウエ
ーハ。1. A semiconductor wafer on which a plurality of transistor elements including front electrodes are formed, characterized in that grooves are formed between the transistor elements on the back surface deeper than the back electrodes.
JP8563584U 1984-06-08 1984-06-08 semiconductor wafer Pending JPS611845U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8563584U JPS611845U (en) 1984-06-08 1984-06-08 semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8563584U JPS611845U (en) 1984-06-08 1984-06-08 semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS611845U true JPS611845U (en) 1986-01-08

Family

ID=30636208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8563584U Pending JPS611845U (en) 1984-06-08 1984-06-08 semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS611845U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040836A (en) * 1973-08-14 1975-04-14
JPS5144637A (en) * 1975-08-22 1976-04-16 Sankyo Co JOSOZAI

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040836A (en) * 1973-08-14 1975-04-14
JPS5144637A (en) * 1975-08-22 1976-04-16 Sankyo Co JOSOZAI

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